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IRF7309TRPBF
MOSFET N/P-CH 30V 4A/3A 8SOIC
- Hersteller
- Fr. Teil #IRF7309TRPBF
- Paket SOIC-8
- Datenblatt IRF7309TRPBF DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 4A, 3A |
| RdsOn(Max)@IdVgs | 50mOhm @ 2.4A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 520pF @ 15V |
| Power-Max | 1.4W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Übersicht
Description
The "TR" in its part number indicates that it comes in a tape and reel format for automated assembly processes, and "PBF" signifies that it is lead-free, compliant with RoHS regulations. This MOSFET is housed in a TO-220 package, providing good thermal performance. Its fast switching speed and high input impedance allow for efficient operation with minimal drive current.
Overall, the IRF7309TRPBF is a versatile component suitable for a wide range of electronic applications where reliability and efficiency are crucial.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling continuous drain current up to 50A, making it suitable for high-load applications.
3. R_DS(on): Low on-resistance (typically 9.5 mΩ at V_GS = 10V) ensures minimal power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 3V, enabling efficient switching.
5. Package: Available in a TO-220 package, allowing for effective heat dissipation.
6. Fast Switching: Offers high-speed switching capabilities, suitable for converters and inverters.
7. RoHS Compliant: Lead-free and environmentally friendly construction.
These features make the IRF7309TRPBF ideal for applications in switching power supplies, motor control, and automotive systems.
Package
Pinout
The pin configuration is typically as follows:
1. Gate (G) - Input for the control signal.
2. Drain (D) - The output terminal where current flows to the load.
3. Source (S) - The terminal connected to ground or the negative side of the power source.
4. Drain (D) - Additional drain pin for parallel configurations or similar uses.
5. Source (S) - Additional source pin for parallel configurations or similar uses.
6. Gate (G) - Additional gate pin for parallel configurations or similar uses.
7. Gate (G) - Additional gate pin for parallel configurations or similar uses.
8. Source (S) - Additional source pin for parallel configurations or similar uses.
This MOSFET is designed for efficient switching and can handle high currents and voltages, making it suitable for various electronic applications.
Manufacturer
Application
Equivalent
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
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