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IRF7313TRPBF
MOSFET 2N-CH 30V 6.5A 8-SOIC
- Hersteller
- Fr. Teil #IRF7313TRPBF
- Paket SOIC-8
- Datenblatt IRF7313TRPBF DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 6.5A |
| RdsOn(Max)@IdVgs | 29mOhm @ 5.8A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 33nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 650pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Übersicht
Description
This MOSFET is housed in a compact TO-220 package, making it easy to mount on PCBs. Its gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for compatibility with low-voltage drive circuits. The IRF7313TRPBF is also RoHS compliant, ensuring it meets environmental standards.
Overall, this device is well-suited for applications requiring efficient switching and high current handling, making it a popular choice in consumer electronics, automotive, and industrial sectors.
Features
- Voltage Rating: 30V maximum drain-source voltage (Vds).
- Current Rating: Continuous drain current (Id) up to 50A.
- Rds(on): Low on-resistance typically around 0.015Ω at Vgs = 10V, enabling efficient power management.
- Gate Threshold Voltage (Vgs(th)): Typically between 1-3V, allowing for low gate drive requirements.
- Package: Available in a TO-220 package, facilitating ease of heat dissipation and PCB mounting.
- Fast Switching: Designed for rapid turn-on and turn-off, making it suitable for high-frequency applications.
- Thermal Characteristics: Good thermal performance with a maximum junction temperature rating of 175°C.
These attributes make the IRF7313TRPBF ideal for applications such as power converters, motor controllers, and other power management systems.
Package
Pinout
1. Gate 1: Control terminal for the first N-channel MOSFET.
2. Drain 1: Drain terminal for the first N-channel MOSFET.
3. Source 1: Source terminal for the first N-channel MOSFET.
4. Source 2: Source terminal for the second N-channel MOSFET.
5. Drain 2: Drain terminal for the second N-channel MOSFET.
6. Gate 2: Control terminal for the second N-channel MOSFET.
7. Gate 1 (N/C): Not connected.
8. Gate 2 (N/C): Not connected.
The device is designed for high-speed switching applications, including power management, motor control, and DC-DC converters. The IRF7313TRPBF features low on-resistance and fast switching times, making it suitable for various power electronic applications.
Manufacturer
Application
Equivalent
1. BSS123 (N-channel MOSFET, lower voltage)
2. IRF730 (single N-channel MOSFET, similar features)
3. SI7460 (dual N-channel MOSFET in a similar configuration)
Always verify specifications like voltage, current, and package type for compatibility before substitution.
Versand
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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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