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IRF7451TRPBF
MOSFET N-CH 150V 3.6A 8SO
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- Datenblatt IRF7451TRPBF DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | IRF7451 |
Übersicht
Description
The MOSFET is housed in a TO-220 package, which provides good thermal dissipation properties, facilitating the handling of higher power levels. Its fast switching speeds contribute to high-frequency operation, enhancing overall system efficiency. The IRF7451TRPBF is also RoHS compliant, ensuring it meets environmental standards for hazardous substances.
In summary, the IRF7451TRPBF is ideal for applications requiring efficient power switching, reliability, and thermal performance in a compact package.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: Continuous drain current (I_D) is up to 50A, suitable for high-power applications.
3. R_DS(on): Low on-resistance (typically around 10 mΩ), which reduces conduction losses and enhances efficiency.
4. Gate Threshold Voltage: V_GS(th) is between 2V and 4V, allowing for easy driving with standard logic levels.
5. Package: Available in a SO-8 package, providing a compact footprint for space-constrained designs.
6. Fast Switching: Optimized for fast switching applications, suitable for use in DC-DC converters, motor drivers, and power management systems.
7. Thermal Performance: Features improved thermal performance, allowing for effective heat dissipation.
These characteristics make the IRF7451TRPBF suitable for various applications in automotive, industrial, and consumer electronics.
Package
Pinout
Pin Configuration:
1. Gate (G) - This pin is used to control the switching of the MOSFET. Applying a voltage to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D) - This pin is where the load is connected. It allows current to enter the MOSFET when it is in the 'on' state.
3. Source (S) - This pin is connected to the ground or negative terminal of the power supply.
Function:
The IRF7451TRPBF is designed for high-speed switching and has applications in power management, motor control, and other electronic devices requiring efficient power handling and minimal loss.
Make sure to refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
Application
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Zahlungen
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