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IRF7507TRPBF
MOSFET N/P-CH 20V 2.4A MICRO8
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- Fr. Teil #IRF7507TRPBF
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- Datenblatt IRF7507TRPBF DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRF7507 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A, 1.7A |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.7A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 15V |
| Power - Max | 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Supplier Device Package | Micro8™ |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
Key specifications include a low on-resistance (R_DS(on)) to minimize power losses and improve efficiency, and a fast switching speed for reduced switching losses. The device is housed in a TO-220 package, which facilitates better thermal management and allows for easier mounting on heat sinks.
Designed for robust performance, the IRF7507TRPBF is often used in applications requiring high reliability and durability. Its Pb-free and RoHS-compliant construction makes it suitable for modern, environmentally conscious designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 75V.
2. Current Capacity: It can handle a continuous drain current (I_D) of up to 20A.
3. R_DS(on): The on-resistance is low, typically around 0.15 ohms, which enhances efficiency by reducing power losses.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges between 2V to 4V, allowing for easy drive with low gate voltages.
5. Fast Switching: Designed for rapid switching, making it suitable for applications like DC-DC converters and motor control.
6. Package Type: Typically offered in a TO-220 package, which provides good thermal performance.
7. Temperature Range: Operates within a wide temperature range, typically from -55°C to +150°C.
Overall, the IRF7507TRPBF is ideal for various power management applications requiring efficient switching and thermal management.
Package
Pinout
1. Gate (G): Controls the MOSFET operation; applying a voltage here turns the device on or off.
2. Drain (D): The output pin where the load is connected; it is the path for current to flow when the device is on.
3. Source (S): The reference pin for the gate voltage; current exits through this pin when the MOSFET is conducting.
4. Body Diode: Integrated within the MOSFET; allows current to flow in the reverse direction when the device is off.
The IRF7507TRPBF features a low on-resistance and is suitable for various power applications, including DC-DC converters and motor drivers. It is housed in a TO-220 package and supports high-speed switching.
Manufacturer
Application
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Zahlungen
Payment Methods
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