IRF7606TRPBF

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IRF7606TRPBF

MOSFET P-CH 30V 3.6A MICRO8

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Spezifikationen

Series HEXFET®
Part Status Obsolete
Base Product Number IRF7606
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro8™
Package 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging Cut Tape (CT), Tape & Reel (TR)

Übersicht

Description

The IRF7606TRPBF is a N-channel MOSFET designed for high-speed switching applications. It features a low on-resistance (R_DS(on)) to minimize power loss and improve efficiency, making it suitable for various applications, including power management, motor control, and DC-DC converters. The device has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of up to 30A, allowing it to handle substantial power levels.
Key features include fast switching speeds, low gate charge (Q_g), and thermal stability, which are advantageous for high-frequency operations. The MOSFET is packaged in a TO-220 format, providing effective heat dissipation. The "TRPBF" suffix indicates that the device is RoHS compliant, ensuring it meets environmental standards.
Overall, the IRF7606TRPBF is a versatile component widely used in various electronic circuits requiring reliable and efficient switching capabilities.

Features

The IRF7606TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_ds) of 60V, making it suitable for medium voltage applications.
2. Current Rating: Can handle continuous drain current (I_d) of 54A at 25°C, allowing for robust power handling.
3. On-Resistance (R_ds(on)): Features a low on-resistance of approximately 0.022 ohms, reducing conduction losses and improving efficiency.
4. Gate Threshold Voltage (V_gs(th)): Typically ranges from 1V to 3V, allowing for effective switching control with lower gate drive voltages.
5. Package Type: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Switching Speed: Fast switching capabilities, making it suitable for various applications including DC-DC converters and motor drives.
7. Thermal Resistance: Low thermal resistance ensures better thermal management during operation.
These features make the IRF7606TRPBF ideal for use in power supplies, load switching, and other high-performance electronic circuits.

Package

The IRF7606TRPBF is packaged in a TO-220 form factor. This package type is designed for power devices, providing efficient thermal dissipation and is suitable for various high-power applications.

Pinout

The IRF7606TRPBF is a dual N-channel MOSFET in a TO-220 package, specifically designed for high-speed switching applications. It features a pin count of 3 for each MOSFET, totaling 6 pins in the package. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - Connected to the ground or negative supply.
The IRF7606TRPBF is commonly used in applications such as power management, motor control, and DC-DC converters, offering low on-resistance and high current handling capabilities. Its robust design allows it to operate efficiently in various electronic circuits.

Manufacturer

The IRF7606TRPBF is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the development and production of semiconductor solutions for various applications, including automotive, industrial, computing, and consumer electronics. The company focuses on power semiconductors, microcontrollers, sensors, and security solutions, emphasizing energy efficiency and innovation. Infineon Technologies is known for its commitment to sustainability and advancing technology in areas such as electric mobility and the Internet of Things (IoT).

Application

The IRF7606TRPBF is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and load switching. Its high efficiency and fast switching capabilities make it suitable for power supplies, inverters, and battery management systems. Additionally, it is utilized in automotive, industrial, and consumer electronics for applications requiring reliable performance in high-voltage environments.

Equivalent

The IRF7606TRPBF is a dual N-channel MOSFET. Equivalent products include the AON7406, STP16NF06, and BSS138. Always check the datasheets for specific parameters like V_DS, I_D, and R_DS(on) to ensure compatibility for your application.

Versand

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