IRF7739L1TRPBF

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IRF7739L1TRPBF

MOSFET N-CH 40V 46A DIRECTFET

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Spezifikationen

Part Status Active
Base Product Number IRF7739
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 46A (Ta), 270A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 160A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 330 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11880 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DirectFET™ Isometric L8
Package DirectFET™ Isometric L8
Packaging Cut Tape (CT), Tape & Reel (TR)

Übersicht

Description

The IRF7739L1TRPBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power management applications. It features a low on-resistance (RDS(on)) and a high current handling capability, making it suitable for use in power supply circuits, motor drive applications, and DC-DC converters. The device is housed in a compact TO-220 package, allowing for efficient heat dissipation.
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of around 70A, and a threshold voltage (VGS(th)) typically between 1.0V to 3.0V. The IRF7739L1TRPBF operates efficiently at a broad temperature range, enhancing its reliability in demanding environments.
Ideal for applications such as load switches, synchronous rectification, and high-speed switching, this MOSFET integrates seamlessly into modern electronic systems. Its RoHS-compliant construction supports environmental sustainability initiatives.

Features

The IRF7739L1TRPBF is a N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
- Voltage Rating: 30V maximum drain-source voltage (V_DS).
- Current Rating: Continuous drain current (I_D) up to 70A, suitable for high current applications.
- R_DS(on): Low on-resistance (around 10 mΩ at V_GS = 10V), which minimizes power losses during operation.
- Gate Threshold Voltage: V_GS(th) typically between 1.0V to 3.0V, enabling efficient drive with lower gate voltages.
- Package Type: Available in TO-220 and D2PAK packages for better thermal performance and ease of mounting.
- Fast Switching Speed: Allows for rapid turn-on and turn-off, making it ideal for switching power supplies and motor drives.
- Thermal Resistance: Low thermal resistance, which improves thermal management in high-power applications.
These features make the IRF7739L1TRPBF suitable for a wide range of applications, including industrial, automotive, and consumer electronics.

Package

The IRF7739L1TRPBF is packaged in a TO-220 form factor. This type of package is commonly used for high-power devices, providing good thermal performance and ease of mounting to heatsinks.

Pinout

The IRF7739L1TRPBF is a N-channel MOSFET designed for high-efficiency power applications. It typically features a pin count of 4, which includes:
1. Gate (G) - This pin controls the MOSFET operation; it receives the input voltage signal to turn the device on or off.
2. Drain (D) - This pin connects to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit, completing the circuit for current flow.
4. Body Diode (integrated) - Although not a pin per se, the IRF7739L1TRPBF contains an intrinsic body diode, allowing for current flow in the reverse direction when the MOSFET is off.
This device is utilized in applications such as synchronous rectification, motor control, and power management due to its low on-resistance and fast switching capabilities.

Manufacturer

The manufacturer of the IRF7739L1TRPBF is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the design, development, and manufacturing of a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and automotive electronics. Infineon's products are used in various applications, such as industrial, automotive, communication, and consumer electronics, focusing on energy efficiency and innovative solutions. The company plays a significant role in the semiconductor industry, particularly in areas like power management and automotive systems.

Application

The IRF7739L1TRPBF is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor control, and switching regulators. Its low RDS(on) allows for efficient power handling in devices like power supplies, lighting controls, and battery management systems. It's also suitable for automotive applications where high efficiency and thermal performance are essential.

Equivalent

The IRF7739L1TRPBF is a N-channel MOSFET. Equivalent products include the NXP BSS138, Infineon IRLZ44N, and Vishay SI7220DN. For specific applications, you may also consider similar N-channel MOSFETs with comparable voltage and current ratings, such as the STMicroelectronics STP16NF06 or the Fairchild FQP30N06L. Always verify electrical characteristics to ensure compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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