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IRF7821TRPBF
MOSFET N-CH 30V 13.6A 8SO
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- Fr. Teil #IRF7821TRPBF
- Paket SOIC-8
- Datenblatt IRF7821TRPBF DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 13.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 9.1mOhm @ 13A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1010 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 155°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Übersicht
Description
Key specifications include a maximum gate-source voltage (V_GS) of ±20V, a gate threshold voltage (V_GS(th)) typically ranging from 1V to 3V, and fast switching speeds, making it ideal for high-frequency applications. The package type is DPAK (TO-252), which supports efficient thermal management.
The IRF7821TRPBF is also RoHS compliant, ensuring it meets environmental regulations. Its robust performance and reliability make it a popular choice in the design of power electronics and automotive applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for lower voltage applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 78A, allowing it to drive high loads effectively.
3. RDS(on): The on-resistance is low (typically 10 mΩ at Vgs = 10V), minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 1V to 2.5V, ensuring it can be driven by low voltage logic levels.
5. Package: It comes in a TO-220 package, which aids in heat dissipation.
6. Applications: Suitable for DC-DC converters, motor drives, and other high-frequency switching applications.
Overall, the IRF7821TRPBF is a versatile and efficient choice for power management in various electronic designs.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal for current output.
3. Source (S) - The terminal for current input.
4. Source (S) - (Second Source pin for configuration and heat dissipation).
5. Gate (G) - (Second Gate pin for enhanced drive capability).
6. Drain (D) - (Second Drain pin for parallel configurations).
7. Drain (D) - (Third Drain pin for further parallel options).
8. Source (S) - (Third Source pin for stacking and efficiency).
The IRF7821TRPBF is capable of handling high currents and voltages, making it suitable for various power management and switching applications. Its features include low on-resistance and fast switching speeds, providing efficient performance in power circuits.
Manufacturer
Application
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