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IRF7907TRPBF
MOSFET 2N-CH 30V 9.1A/11A 8SO
- Hersteller
- Fr. Teil #IRF7907TRPBF
- Paket SOIC-8
- Datenblatt IRF7907TRPBF DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 9.1A, 11A |
| RdsOn(Max)@IdVgs | 16.4mOhm @ 9.1A, 10V |
| Vgs(th)(Max)@Id | 2.35V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 10nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 850pF @ 15V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Übersicht
Description
This MOSFET has a maximum continuous drain current of around 75A and a maximum drain-source voltage of 30V, making it ideal for medium-voltage applications. Its fast switching speed helps improve the efficiency of power conversion processes, particularly in switching power supplies.
The "TRPBF" suffix indicates that it is RoHS compliant, meaning it is free from hazardous materials, which is important for environmentally conscious designs. The device is typically housed in a TO-220 package, facilitating easy heat dissipation.
Overall, the IRF7907TRPBF is a reliable choice for engineers seeking a robust and efficient MOSFET for various electronic applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 80A, allowing for robust performance in power applications.
3. R_DS(on): It features a low on-state resistance (R_DS(on)) of around 10 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes power loss and heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V and 4V, enabling efficient operation with various gate drive voltages.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: Suitable for high-frequency applications thanks to its low gate charge (Q_G) and fast switching characteristics.
These features make the IRF7907TRPBF ideal for applications in power management, motor control, and DC-DC converters.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching; applies voltage to turn on/off the device.
2. Drain (D) - The terminal where the load is connected and current flows out.
3. Source (S) - The terminal through which current enters the MOSFET.
The pin configuration typically follows this layout:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pins 4-8: Not connected or used for heat dissipation, depending on the package type.
The IRF7907TRPBF is designed for high-speed switching applications, offering low on-resistance and a high current rating, making it suitable for power management and control in various electronic circuits.
Manufacturer
Application
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Zahlungen
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