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IRF8707TRPBF
MOSFET N-CH 30V 11A 8SO
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- Datenblatt IRF8707TRPBF DataSheet
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Spezifikationen
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 11.9mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 2.35V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 9.3 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 760 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Übersicht
Description
This MOSFET features low on-resistance (R_DS(on)) of approximately 10 mΩ, which minimizes conduction losses and enhances efficiency. Additionally, it has a fast switching speed, making it ideal for high-frequency applications.
The device is packaged in a TO-220 format, allowing for efficient thermal management and easy mounting on heatsinks. Its gate threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring compatibility with standard logic level control voltages.
Overall, the IRF8707TRPBF is a reliable choice for engineers looking to optimize performance in power circuits, offering robust specifications and versatility in design.
Features
1. Voltage Rating: Drain-Source Voltage (V_DS) up to 30V, suitable for low-voltage applications.
2. Current Rating: Continuous Drain Current (I_D) of 50A, allowing for significant power handling.
3. R_DS(on): Low on-resistance, typically 11.5 mΩ at V_GS = 10V, which reduces power losses and improves efficiency.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, enabling operation with lower gate drive voltages.
5. Fast Switching Speed: Enhanced switching performance for applications such as DC-DC converters and motor drive systems.
6. Package: Available in a TO-220 package, providing good thermal performance and ease of Heat sinking.
7. Applications: Ideal for power management, automotive electronics, and other high-current switching applications.
The IRF8707TRPBF combines robustness, efficiency, and versatility, making it suitable for a variety of electronic designs.
Package
Pinout
Here are the pin functions:
1. Gate (G): This pin controls the MOSFET's operation, allowing it to turn on or off based on the voltage applied.
2. Drain (D): The drain pin is where the current flows out of the MOSFET when it is turned on.
3. Source (S): The source pin is the terminal through which the current enters the MOSFET.
The IRF8707TRPBF is designed for high efficiency and is suitable for applications requiring low on-resistance and fast switching.
Manufacturer
Application
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Zahlungen
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