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IRF9317TRPBF
MOSFET P-CH 30V 16A 8SO
- Hersteller
- Fr. Teil #IRF9317TRPBF
- Paket SOIC-8
- Datenblatt IRF9317TRPBF DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 16A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 6.6mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 92 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2820 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Übersicht
Description
The IRF9317TRPBF is housed in a TO-220 package, providing effective heat dissipation. Its fast switching capabilities improve the efficiency of power circuits, reducing heat generation and prolonging component life. Applications include power supplies, DC-DC converters, and motor control circuits.
This MOSFET is ideal for engineers looking for reliable, high-performance components in their designs. As a Pb-free part, it also meets environmental standards, making it suitable for RoHS-compliant applications.
Features
- Voltage Rating: 30V maximum drain-source voltage (V_DS).
- Current Rating: Continuous drain current (I_D) of up to 60A at 25°C.
- R_DS(on): Low on-resistance of approximately 6.5 mΩ at VGS = 10V, enhancing efficiency.
- Fast Switching: Suitable for high-speed switching applications due to minimal gate charge (Q_g).
- Package: Available in a TO-220 package, facilitating heat dissipation.
- Thermal Performance: High thermal stability with a maximum junction temperature of 175°C.
- Applications: Ideal for power management, motor control, and DC-DC converters.
These features make the IRF9317TRPBF suitable for a variety of electronic designs requiring reliable performance and efficiency.
Package
Pinout
1. Gate (G1, G2): Two gate pins for controlling the two MOSFETs.
2. Drain (D1, D2): Two drain pins for connecting to the load for each MOSFET.
3. Source (S1, S2): Two source pins for connecting to ground or a common source point for each MOSFET.
4. Common Source: The two source pins are typically connected together in applications.
This device is commonly used in power management applications, switching circuits, and as a low-side switch in various electronic designs. It features low on-resistance and fast switching capabilities, making it suitable for high-efficiency applications.
Manufacturer
Application
Equivalent
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Zahlungen
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