IRF9610PBF

Bilder sind nur zur Referenz

IRF9610PBF

MOSFET P-CH 200V 1.8A TO220AB

100% Original und Neu

24 Stunden bereit zum Versand

365 Tage Garantie

RFQ & Erhalten Sie mehr Rabatte

Spezifikationen

Supplier Vishay Siliconix
Package Tube
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 1.8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3Ohm @ 900mA, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 11 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 170 pF @ 25 V
PowerDissipation(Max) 20W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Übersicht

Description

The IRF9610PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 9A, making it suitable for various power management applications.
Key features include a low on-resistance (R_DS(on)) of approximately 0.4 ohms, which enhances efficiency by reducing power losses during operation. The device is also designed for fast switching speeds, facilitating efficient operation in high-frequency applications.
The IRF9610PBF is packaged in a TO-220 form factor, allowing for effective heat dissipation. It is RoHS compliant, indicating that it meets environmental regulations regarding hazardous substances. Common applications include motor control, power converters, and audio amplifiers.
When using the IRF9610PBF, proper thermal management and gate drive considerations are essential to ensure optimal performance and reliability in electronic circuits.

Features

The IRF9610PBF is an N-channel MOSFET known for its high efficiency and versatility in power applications. Key features include:
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 60V, making it suitable for various high-voltage applications.
2. Current Rating: Can handle continuous drain currents (I_D) up to 9.2A, depending on conditions.
3. R_DS(on): Low on-resistance (approximately 0.4 Ohms at V_GS = 10V), contributing to reduced power loss and enhanced thermal performance.
4. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) typically between 2V to 4V, allowing for easier switching.
5. Package Type: Available in a TO-220 package, facilitating efficient heat dissipation.
6. Applications: Commonly used in motor control, power supply circuits, and automotive applications due to its high-speed switching capabilities.
7. RoHS Compliant: Environmentally friendly, compliant with RoHS regulations.
These features make the IRF9610PBF an excellent choice for a variety of electronic circuit designs requiring reliable power management.

Package

The IRF9610PBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation, making it suitable for high power applications.

Pinout

The IRF9610PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is where the current enters the MOSFET, and it is typically connected to ground in low-side switching applications.
The IRF9610PBF is designed for applications such as switching and amplification, with a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of up to 9.2A. It is commonly used in power management circuits and high-speed switching applications.

Manufacturer

The IRF9610PBF is manufactured by Infineon Technologies AG, a multinational semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company focuses on innovative technologies that enhance energy efficiency and connectivity across various sectors, making it a key player in the electronics and semiconductor industry.

Application

The IRF9610PBF is an N-channel MOSFET commonly used in applications such as power management, motor control, audio amplification, and switching power supplies. It is suitable for low-side switching and can handle high voltages and currents, making it ideal for various electronic circuits, including DC-DC converters and battery management systems. Its fast switching capabilities also support high-frequency applications.

Equivalent

The IRF9610PBF is an N-channel MOSFET. Equivalent products include the BSS84, SI9430, and MTP12N06. While these may have similar specifications, it's essential to check parameters like voltage, current ratings, and package type for compatibility in your specific application.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:

1. PayPal

2. Kredit- / Debitkarte

3. Überweisung