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IRF9640SPBF
MOSFET P-CH 200V 11A D2PAK
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- Datenblatt IRF9640SPBF DataSheet
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Spezifikationen
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
| Power Dissipation (Max) | 3W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | IRF9640 |
Übersicht
Description
The MOSFET operates with a gate threshold voltage (VGS(th)) typically between 2V to 4V, allowing it to be easily driven by low-voltage logic levels. The device comes in a TO-220 package, facilitating efficient heat dissipation. The IRF9640SPBF is also characterized by its fast switching capabilities, making it advantageous in high-frequency applications.
This component is manufactured in compliance with RoHS standards, ensuring environmental safety. Overall, the IRF9640SPBF is a reliable choice for designers looking to enhance performance and efficiency in their electronic circuits.
Features
1. Voltage Rating: Maximum drain-source voltage (VDS) of 55V.
2. Current Rating: Continuous drain current (ID) capability of 9.2A at 25°C.
3. RDS(on): Low on-resistance of approximately 0.4 ohms, ensuring efficient power dissipation.
4. Gate Threshold Voltage (VGS(th)): Typically between 2V to 4V, allowing for easy drive with low gate voltage.
5. Fast Switching Speed: Suitable for high-frequency applications, enhancing efficiency in switching power supplies and converters.
6. Package Type: Available in TO-220 and DPAK packages for versatile mounting options.
7. Thermal Resistance: Good thermal performance with a maximum junction temperature of 175°C, making it reliable in demanding environments.
These features make the IRF9640SPBF suitable for applications such as power management, motor control, and other high-efficiency switching applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the transistor to conduct between the drain and source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET when it is turned on. It is connected to the load.
3. Source (S): This is the terminal where the current enters the MOSFET. It is typically grounded in most applications.
The IRF9640SPBF is designed for high-speed switching and can handle high voltages and currents, making it suitable for applications such as power management and motor control. It features a low on-resistance, which helps reduce power loss in the circuit.
Manufacturer
Application
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Zahlungen
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