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IRF9952TRPBF
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
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- Datenblatt IRF9952TRPBF DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | IRF995 |
Übersicht
Description
The IRF9952TRPBF is housed in a TO-220 package, providing robust thermal performance and ease of mounting. Its low gate threshold voltage ensures compatibility with low-voltage logic levels, facilitating smooth integration into modern electronic circuits. Additionally, the "TRPBF" designation indicates that the part is RoHS compliant, making it environmentally friendly.
Overall, the IRF9952TRPBF is ideal for engineers looking for reliable and efficient MOSFET solutions in demanding power applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 55V.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 50A.
3. RDS(on): It offers a low on-resistance (RDS(on)) of about 10mΩ at VGS = 10V, which helps in reducing conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, making it suitable for low-voltage applications.
5. Package Type: It comes in a TO-220 package, which aids in effective heat dissipation.
6. Fast Switching: Suitable for high-speed switching applications due to its low gate charge (QG).
7. Applications: Commonly used in power supplies, motor control, and DC-DC converters.
This MOSFET is ideal for applications requiring high performance and efficiency.
Package
Pinout
1. Gate (G1) - Controls the MOSFET's switching operation for the first channel.
2. Drain (D1) - The output for the first MOSFET channel, where the load is connected.
3. Source (S1) - The common source for the first channel, connected to ground in typical applications.
4. Gate (G2) - Controls the MOSFET's switching operation for the second channel.
5. Drain (D2) - The output for the second MOSFET channel, also connected to a load.
The IRF9952TRPBF is designed for high efficiency and can handle substantial voltage and current levels, making it suitable for various applications in power management circuits.
Manufacturer
Application
Equivalent
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Zahlungen
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