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IRFB3306GPBF
MOSFET N-CH 60V 120A TO220AB
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- Datenblatt IRFB3306GPBF DataSheet
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Spezifikationen
| Supplier | Infineon Technologies |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.2mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4520 pF @ 50 V |
| PowerDissipation(Max) | 230W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
The "GPBF" suffix indicates that this MOSFET is RoHS compliant, meaning it is free from hazardous substances. Key features include low gate charge, high-speed switching, and thermal stability, making it effective in energy-efficient designs. Its TO-220 packaging allows for effective heat dissipation, enhancing reliability in demanding environments. Overall, the IRFB3306GPBF is a robust choice for designers seeking efficient and reliable performance in power electronics.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Continuous Drain Current: The MOSFET can handle up to 110A of continuous current, allowing for robust performance in demanding environments.
3. Low R_DS(on): With a typical on-resistance of 0.015 ohms, it minimizes conduction losses, enhancing overall efficiency.
4. Fast Switching Speed: This device supports high-speed switching, making it suitable for applications in power conversion and motor control.
5. Thermal Characteristics: It features a high thermal performance with a maximum junction temperature of 175°C, allowing for reliable operation under high-temperature conditions.
6. TO-220 Package: The package facilitates effective heat dissipation and easy mounting in various circuit designs.
7. RoHS Compliant: It meets environmental standards, making it suitable for modern electronic applications.
These features make the IRFB3306GPBF ideal for use in power supplies, inverters, and automotive applications.
Package
Pinout
1. Gate (G): This is the control terminal that turns the MOSFET on or off by applying a voltage.
2. Drain (D): This terminal is where the load is connected; it carries the current when the device is on.
3. Source (S): This terminal is connected to the ground or negative side of the power supply; it is the return path for current.
4. Tab (T): This is an exposed metal tab used for heat dissipation; it is typically connected to the source.
The IRFB3306GPBF is designed for high-efficiency applications and can handle high currents and voltages, making it suitable for power management in various electronic devices.
Manufacturer
Application
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Zahlungen
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