IRFB4212PBF

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IRFB4212PBF

MOSFET N-CH 100V 18A TO220AB

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Spezifikationen

Supplier Infineon Technologies
Package Tube
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 72.5mOhm @ 13A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 23 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 550 pF @ 50 V
PowerDissipation(Max) 60W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Übersicht

Description

IRFB4212PBF is a high-voltage N-channel enhancement-mode power MOSFET from International Rectifier (now Infineon). Key points:
- Voltage/current: Vds around 1200 V; Id in the tens of amperes; designed for high-voltage switching.
- Performance: low on-resistance for efficient operation and fast switching with good ruggedness.
- Packaging: Pb-free (PBF suffix).
- Applications: offline switch-mode power supplies, motor drives, inverters, PFC stages, and other high-voltage switching roles.
- Gate drive: typically requires around 10 V (logic-level gating not guaranteed); threshold roughly 2–4 V.
For exact electrical specs (Rds(on), Idmax, Qgs, Qgd, gate charge, thermal data) and the exact package type, consult the official datasheet.

Features

IRFB4212PBF features (concise):
- N-channel, enhancement-mode power MOSFET
- Trench MOSFET architecture for low Rds(on) and high efficiency
- High switching performance: fast turn-on/turn-off, low gate charge
- Robust electricals: high breakdown voltage, strong avalanche ruggedness, good SOA
- Pb-free, RoHS compliant (PBF)
- Suitable for hard switching in SMPS, DC-DC converters, motor drives, inverters
- Available in standard power-package options (e.g., D2PAK/DPAK/TO-220 variants, depending on supplier)
Note: For exact electrical ratings (Vds, Id, Rds(on), Qg, etc.), refer to the datasheet.

Package

It uses a D2PAK (TO-263) surface-mount package, Pb-free (PBF).

Pinout

IRFB4212PBF is a 3‑pin N‑channel power MOSFET. Pin functions (typical pinout):
- Pin 1: Gate — voltage input that turns the MOSFET on/off.
- Pin 2: Drain — main current input; usually connected to the metal tab/heatsink.
- Pin 3: Source — current return (output to load/ground).
"PBF" denotes Pb‑free (RoHS compliant).

Manufacturer

- Manufacturer: Infineon Technologies AG (via the former International Rectifier brand; IR branding is now part of Infineon).
- What kind of company: A German multinational semiconductor manufacturer and systems solutions company, one of the world’s leading producers of power semiconductors for automotive, industrial, and consumer applications.

Application

IRFB4212PBF is a high-current, fast-switching N-channel power MOSFET. Typical applications:
- Switching power supplies and DC-DC converters (buck/boost)
- Motor drives for BLDC/induction motors
- Renewable energy inverters and grid-tied power stages
- Uninterruptible power supplies and telecom power systems
- Automotive power electronics (DC-DC converters, inverters)
- Power factor correction and other high-frequency switching circuits

Equivalent

I need the key specs to give accurate equivalents. Please specify Vds, continuous Id, Rds(on) at Vgs, package (TO-220/TO-252/DFN/etc.), switching speed and intended application (e.g. synchronous buck, motor drive). With that I’ll list direct cross-replacements.

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