IRFB4229PBF

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IRFB4229PBF

MOSFET N-CH 250V 46A TO220AB

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Spezifikationen

Package Bulk,Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 46A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 46mOhm @ 26A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4560 pF @ 25 V
PowerDissipation(Max) 330W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Übersicht

Description

The IRFB4229PBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power switching applications. It features a voltage rating of 100V and a continuous current rating of up to 60A, making it suitable for various applications, including power supplies, motor drivers, and DC-DC converters.
Key specifications include a low on-resistance (R_DS(on)) of around 4.7mΩ, which helps to minimize power loss during operation, and a fast switching speed that enables efficient performance in high-frequency applications. The device is housed in a TO-220 package, providing good thermal management capabilities.
The IRFB4229PBF is also RoHS compliant, ensuring it meets environmental regulations regarding hazardous substances. This MOSFET is popular in both consumer and industrial electronics due to its robustness, reliability, and performance characteristics.

Features

The IRFB4229PBF is a high-performance N-channel MOSFET designed for power applications. Key features include:
- Voltage Rating: 75V maximum drain-source voltage (V_DS).
- Current Rating: Continuous drain current of up to 100A at 25°C.
- On-Resistance (R_DS(on)): Low on-resistance, typically around 4.1 mΩ, ensuring efficient performance and reduced power loss.
- Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, allowing for effective switching with low gate drive voltages.
- Fast Switching Speed: High-speed switching capabilities suitable for high-frequency applications.
- Package: Available in TO-220 and DPAK packages, facilitating easy thermal management and integration into designs.
- RoHS Compliance: Pb-free and environmentally friendly.
These features make the IRFB4229PBF suitable for various applications, including DC-DC converters, motor drives, and power management systems.

Package

The IRFB4229PBF is packaged in a TO-220 form factor. This package type is commonly used for high-power applications due to its efficient heat dissipation capabilities.

Pinout

The IRFB4229PBF is an N-channel MOSFET with a total of 6 pins. Its pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal where the load current flows out.
3. Source (S) - The terminal through which current enters the MOSFET.
The specific pinout typically follows the arrangement:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pin 4: Source
- Pin 5: Drain
- Pin 6: Gate
The pin count and function facilitate its use in various applications, such as power management, motor control, and switching applications, given its high current handling and low on-resistance characteristics. The IRFB4229PBF is designed for high-efficiency and high-speed switching.

Manufacturer

The IRFB4229PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Neubiberg, Germany. The company specializes in the design and production of a wide range of semiconductor and system solutions, focusing on applications in automotive, industrial power control, and the Internet of Things (IoT). Infineon is known for its expertise in power semiconductors, microcontrollers, and sensors, serving various industries such as automotive, industrial, and consumer electronics. The IRFB4229PBF is specifically a N-channel MOSFET, widely used for power management and switching applications.

Application

The IRFB4229PBF is an N-channel MOSFET commonly used in applications such as power supplies, DC-DC converters, motor drives, and renewable energy systems. Its high efficiency and fast switching capabilities make it suitable for industrial automation, electric vehicles, and audio amplifiers. Additionally, it can be employed in high-frequency applications and as a switch in various power management circuits.

Equivalent

The IRFB4229PBF is a N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and AOD6N75. Always verify specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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