IRFB4332PBF

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IRFB4332PBF

IRFB4332 - 12V-300V N-CHANNEL PO

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Spezifikationen

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 33mOhm @ 35A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 150 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 5860 pF @ 25 V
PowerDissipation(Max) 390W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Übersicht

Description

The IRFB4332PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. With a maximum voltage rating of 55V and a continuous drain current capability of up to 90A, it is suitable for high-efficiency switching applications. This MOSFET features a low on-resistance (R_DS(on)), which minimizes power loss and enhances thermal performance, making it ideal for use in power supplies, motor drives, and other high-current applications.
The IRFB4332PBF is housed in a TO-220 package, enabling effective heat dissipation. It is specifically designed for use in fast-switching applications, ensuring rapid response times. Additionally, as a lead-free component, it complies with RoHS (Restriction of Hazardous Substances) standards, making it an environmentally friendly choice. Overall, the IRFB4332PBF provides reliability and efficiency for modern electronic systems.

Features

The IRFB4332PBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 75V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain current (ID) up to 110A, allowing for efficient power management.
3. Low RDS(on): It features a low on-resistance (RDS(on)) value of approximately 0.045Ω at a gate-source voltage (VGS) of 10V, which minimizes power losses and improves efficiency.
4. Fast Switching: The MOSFET is capable of fast switching speeds, benefiting applications that require high-frequency operation.
5. Thermal Performance: It has a high thermal conductivity and can operate in a wide temperature range, enhancing reliability in demanding environments.
6. Package Type: The device is offered in a TO-220 package, providing good heat dissipation characteristics.
These features make the IRFB4332PBF suitable for applications such as DC-DC converters, motor drives, and power management systems.

Package

The IRFB4332PBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and allowing for easy mounting to heat sinks for efficient heat dissipation.

Pinout

The IRFB4332PBF is a N-channel MOSFET with a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the load.
In some configurations, the remaining pins serve as additional connections for better thermal management or packaging, depending on the specific package type (e.g., TO-220 or DPAK). The device is designed for high-speed switching applications, featuring low on-resistance and high current capacity, making it suitable for power management and converters.
For detailed specifications such as voltage ratings, current ratings, and thermal characteristics, refer to the manufacturer's datasheet.

Manufacturer

The IRFB4332PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovation in power management, microcontrollers, and sensor technologies, focusing on enhancing energy efficiency and performance in electronic devices. Infineon serves diverse markets, including automotive, industrial, and security sectors, and is recognized for its commitment to sustainability and advancing technology in power electronics.

Application

The IRFB4332PBF is an N-channel MOSFET used primarily in power management applications, including DC-DC converters, motor drives, and power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for applications like renewable energy systems, electric vehicles, and industrial automation, where efficient power conversion and thermal performance are critical.

Equivalent

Equivalent products to the IRFB4332PBF include the FDBL40N15 and the STP75NF75. Other alternatives may include the CSD19536KCS and the BUK7YB10-40. Always check specifications such as voltage, current ratings, and RDS(on) to ensure compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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