IRFB4610

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IRFB4610

MOSFET N-CH 100V 73A TO220AB

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Spezifikationen

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package TO-220-3
Packaging Tube

Übersicht

Description

IRFB4610 is an N-channel enhancement-mode HEXFET power MOSFET from IR (International Rectifier, now Infineon). It’s designed for high‑voltage, high‑efficiency switching in applications like offline switch‑mode power supplies, motor drives, and inverters. It’s typically used as a high‑side or low‑side switch in bridge configurations. Key points:
- High drain‑source voltage rating (hundreds of volts) and low on‑resistance for efficient conduction.
- Available in common power packages (e.g., TO‑220/TO‑220AB and surface‑mount D2PAK/TO‑263).
- Gate drive: enhancement type; Vgs(th) ~2–4 V, full enhancement typically at 10 V (though logic‑level variants exist).
- Important specs to check: Vds, Id, Rds(on), Qgs, Qgd, total gate charge, switching times, and avalanche energy.
For exact numbers and package options, consult the official IRF/Infineon IRFB4610 datasheet.

Features

IRFB4610 features (concise):
- N-channel enhancement-mode power MOSFET
- 100 V blocking voltage
- High drain current capability with good thermal performance
- Low on-resistance for reduced conduction losses
- Fast switching with low gate charge
- Robust avalanche energy/inductive-load handling
- Built-in body diode for freewheeling
- Pb-free packaging options (e.g., TO-220, D2PAK, DPAK)
- Suitable for switch-mode power supplies, motor drives, DC-DC converters, and automotive/industrial applications

Package

N-channel power MOSFET in a TO-220AB (through-hole) package.

Pinout

- Pin count: 3 pins (G, D, S). The tab is usually connected to Drain.
- Function: N-channel enhancement-mode power MOSFET used as a high-current switch in power circuitry (e.g., DC-DC converters, motor drivers). Pinout (typical packages like TO-220/D²PAK): Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source; Drain also ties to the tab.

Manufacturer

Manufacturer: International Rectifier (IR). It is a semiconductor company specializing in power electronics (power MOSFETs, IGBTs, diodes, drivers). IR is now a brand of Infineon Technologies, the German semiconductor company that acquired it in 2015.

Application

IRFB4610 is a high-speed N-channel power MOSFET. Common application areas:
- Switch-mode power supplies and DC-DC converters
- Motor drives (BLDC, PMSM, induction) and inverters
- Renewable-energy power electronics (solar inverters, energy storage, UPS)
- Automotive/industrial power electronics (DC-DC, charging)
- Class-D audio amplifiers and other high-efficiency switched-mode stages

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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