IRFB7530PBF

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IRFB7530PBF

MOSFET N-CH 60V 195A TO220AB

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Spezifikationen

Series HEXFET®, StrongIRFET™
Part Status Not For New Designs
Base Product Number IRFB7530
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 411 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13703 pF @ 25 V
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package TO-220-3
Packaging Tube

Übersicht

Description

The IRFB7530PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) rating of 110A, making it suitable for various switching applications, such as power supplies, motor drives, and converters.
With a low on-resistance (RDS(on)) of approximately 5.5 mΩ, it ensures minimal power loss and heat generation during operation, enhancing overall system efficiency. The device is packaged in a TO-220 form factor, which allows for better thermal management.
The IRFB7530PBF is also RoHS-compliant, indicating it is free from hazardous substances, making it environmentally friendly. Overall, this MOSFET is commonly utilized in applications requiring reliable performance under high load conditions and is favored for its robustness and thermal performance.

Features

The IRFB7530PBF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Handles continuous drain current (I_D) up to 75A, making it suitable for demanding applications.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 10.5 mΩ at V_GS=10V, which helps reduce power losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 1V to 2V, enabling efficient switching.
5. Fast Switching: Ideal for PWM and other switching applications due to fast switching speeds.
6. Package Type: Available in a TO-220 package, which allows for effective heat dissipation.
7. Thermal Performance: Designed to operate efficiently at high temperatures, with a maximum junction temperature (T_j) of 175°C.
These features make the IRFB7530PBF suitable for power management, motor control, and other applications requiring robust performance.

Package

The IRFB7530PBF is typically packaged in a TO-220 format. This package type is designed for high power applications, featuring good thermal performance and ease of mounting to heatsinks.

Pinout

The IRFB7530PBF is a N-channel MOSFET with a pin count of 5. The function of each pin is as follows:
1. Gate (G): Controls the MOSFET's switching; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The terminal where the current exits the MOSFET; connected to the load.
3. Source (S): The terminal where current enters the MOSFET; typically connected to ground in a common-source configuration.
4. Tab: The metal tab serves as a heat sink and is typically connected to the source for thermal management.
5. Body Diode: Internal to the MOSFET, it allows current to flow in the reverse direction when the MOSFET is off.
The IRFB7530PBF is designed for efficient switching applications, often used in power management and motor control circuits.

Manufacturer

The IRFB7530PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in advanced semiconductor solutions, focusing on power management, automotive, industrial, and security applications. The company is known for its innovations in power semiconductors, including MOSFETs like the IRFB7530PBF, which are widely used in applications such as power supplies, motor drives, and renewable energy systems. Infineon plays a significant role in the development of technologies that contribute to energy efficiency and sustainability.

Application

The IRFB7530PBF is an N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, power supplies, motor drives, and electric vehicles. It is also suitable for high-efficiency switching applications, such as inverters for renewable energy systems and telecom power systems, due to its low on-resistance and fast switching capabilities.

Equivalent

Equivalent products to the IRFB7530PBF MOSFET include the AOD8N60, FDB7030, STP75NF75, and NVP75N60. Always verify specifications such as RDS(on), voltage ratings, and current handling to ensure compatibility for your specific application.

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