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IRFB7534PBF
MOSFET N-CH 60V 195A TO220AB
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- Fr. Teil #IRFB7534PBF
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- Datenblatt IRFB7534PBF DataSheet
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Spezifikationen
| Supplier | Infineon Technologies |
| Package | Tube |
| Series | HEXFET®, StrongIRFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 195A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 2.4mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 3.7V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 279 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 10034 pF @ 25 V |
| PowerDissipation(Max) | 294W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
The IRFB7534PBF is housed in a TO-220 package, facilitating easy heat dissipation and mounting. Its fast switching capabilities allow for efficient operation in high-frequency applications. The "PBF" suffix indicates that this part is lead-free, adhering to RoHS standards, which is important for environmentally conscious designs. Overall, the IRFB7534PBF is a reliable choice for engineers seeking robust performance in power electronics applications.
Features
- Voltage Rating: 75V, suitable for various switching applications.
- Current Rating: Continuous drain current of up to 120A, allowing for high power handling.
- RDS(on): Low on-resistance of approximately 6.5 mΩ at VGS = 10V, enhancing efficiency and reducing heat generation.
- Gate Threshold Voltage (VGS(th)): Typically between 2V to 4V, enabling efficient switching.
- Fast Switching Speed: Ideal for applications like DC-DC converters and motor drives.
- Package Type: Available in a TO-220 package, facilitating heat dissipation.
- Robustness: Designed for high-temperature operation with a maximum junction temperature of 175°C.
- Applications: Suitable for automotive, industrial, and consumer electronics.
These features make the IRFB7534PBF a popular choice for power management and conversion applications.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): The source pin is where the current exits the MOSFET. It is usually connected to ground or the negative side of the supply in typical applications.
4. Body Diode: Internally, the IRFB7534PBF contains a body diode between the drain and source, allowing current to flow in the reverse direction when needed.
This MOSFET is commonly used in power applications due to its low on-resistance and high-speed switching capabilities.
Manufacturer
Application
1. DC-DC converters
2. Motor drives
3. Power inverters
4. Switching power supplies
5. Solar inverters
6. Battery management systems
Its high efficiency and fast switching capabilities make it suitable for these applications, providing effective power management and control.
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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