IRFB7540PBF

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IRFB7540PBF

MOSFET N-CH 60V 110A TO220

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Spezifikationen

Series HEXFET®, StrongIRFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 65A, 10V
Vgs(th) (Max) @ Id 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4555 pF @ 25 V
Power Dissipation (Max) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number IRFB7540

Übersicht

Description

The IRFB7540PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a low on-resistance (RDS(on)) and high-speed switching capabilities, making it suitable for use in power management, motor control, and DC-DC conversion applications.
Key specifications include a maximum drain-source voltage (VDS) of 40V, a continuous drain current (ID) of up to 90A, and a low gate threshold voltage (VGS(th)), which enhances its compatibility with various control signals. The device is housed in a TO-220 package, allowing for effective heat dissipation and easy mounting.
The IRFB7540PBF is characterized by its high thermal performance and robustness, making it ideal for demanding applications. Its integrated body diode also supports reverse conduction, adding versatility to circuit design. As a part of the international RoHS compliant product line, it adheres to environmental regulations, making it suitable for eco-friendly applications.

Features

The IRFB7540PBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V.
2. Current Rating: Continuous drain current (I_D) is rated up to 75A, making it suitable for high-current applications.
3. R_DS(on): Low on-resistance of approximately 5.9 mΩ at V_GS = 10V, which minimizes conduction losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, enabling easy drive with standard logic levels.
5. Fast Switching: It provides rapid switching capabilities, enhancing efficiency in switching power supplies and motor drivers.
6. Package: Available in a TO-220 package, which allows for effective heat dissipation.
7. Safe Operating Area: It features a robust Safe Operating Area (SOA) for reliable performance.
These characteristics make the IRFB7540PBF suitable for applications in DC-DC converters, inverters, and other power management systems.

Package

The IRFB7540PBF is packaged in a TO-220 format, which is a type of metal case package designed for high-power applications, allowing for effective heat dissipation and easy mounting to heat sinks.

Pinout

The IRFB7540PBF is an N-channel MOSFET that features a total of 3 pins.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate turns the device on, allowing current to flow from the drain to the source.
2. Drain (D): This is the pin where the current enters the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground in a low-side switch configuration.
The IRFB7540PBF is known for its low on-resistance and high-speed switching capabilities, making it suitable for various power management applications, including DC-DC converters and motor drives.

Manufacturer

The IRFB7540PBF is manufactured by Infineon Technologies, a leading global semiconductor manufacturer. Infineon is known for producing a wide range of semiconductor products, including power management solutions, microcontrollers, and sensor technologies. The company specializes in providing innovative technologies for automotive, industrial, and communication applications. Infineon focuses on enhancing energy efficiency and performance in electronic systems, contributing to advancements in various industries such as automotive, IoT, and renewable energy.

Application

The IRFB7540PBF is an N-channel MOSFET primarily used in power electronics applications such as DC-DC converters, motor drives, and power inverters. Its low on-resistance and high-speed switching capabilities make it suitable for applications in renewable energy systems, electric vehicles, and power management circuits. Additionally, it can be used in high-frequency switching applications and for load switching in various electronic devices.

Equivalent

The IRFB7540PBF is an N-channel MOSFET. Equivalent products include:
1. FQP50N60C - Fairchild
2. STP40NF10 - STMicroelectronics
3. BSC050N06 - Infineon
4. AOD5N60 - AOS
5. MTP50N60 - ON Semiconductor
Always verify specifications like V_DS, I_D, R_DS(on), and packaging to ensure compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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