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IRFD110PBF
MOSFET N-CH 100V 1A 4DIP
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- Fr. Teil #IRFD110PBF
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- Datenblatt IRFD110PBF DataSheet
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Spezifikationen
| Part Status | Obsolete |
| Base Product Number | IRFD110 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package | 4-DIP (0.300", 7.62mm) |
| Packaging | Tube |
Übersicht
Description
Key features include low on-resistance (R_DS(on)), which minimizes power loss and heat generation, and a fast switching speed, enhancing overall efficiency. The IRFD110PBF is housed in a TO-220 package, allowing for easy thermal management through heat sinks. Its robustness makes it ideal for both consumer and industrial applications, where reliable performance is critical.
Overall, the IRFD110PBF is an essential component in modern electronic design, delivering both performance and reliability in power applications.
Features
1. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 7.5A, enabling effective current management in circuits.
3. Low R_DS(on): The MOSFET features a low on-resistance (R_DS(on)) of approximately 0.04Ω, which minimizes power losses during operation.
4. Fast Switching: Its design allows for rapid switching speeds, enhancing performance in high-frequency applications.
5. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically around 2-4V, allowing for easy drive with standard logic levels.
6. Package Type: It is available in a TO-220 package, facilitating efficient thermal management and heat dissipation.
7. RoHS Compliant: The IRFD110PBF is compliant with RoHS standards, ensuring it meets environmental regulations.
These features make the IRFD110PBF suitable for use in various electronic circuits, including power supplies and motor control systems.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to switch on and off.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. It allows current to flow out of the MOSFET.
The IRFD110PBF is designed for applications such as power switching and amplifying signals, featuring low on-resistance and fast switching capabilities.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
Payment Methods
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Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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