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IRFD9024PBF
MOSFET P-CH 60V 1.6A 4DIP
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- Datenblatt IRFD9024PBF DataSheet
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Spezifikationen
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 960mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRFD9024 |
Übersicht
Description
The IRFD9024PBF is part of the HEXFET® series, known for their low on-resistance and fast switching speeds, which contribute to reduced power losses and efficient performance in a variety of circuit designs. The MOSFET is housed in a compact TO-252 (DPAK) package, which allows for easy integration in surface-mount designs.
Its gate-to-source voltage (V_GS) threshold ranges from -2V to -4V, allowing it to be easily controlled by standard logic level signals. This MOSFET is typically used in applications such as DC-DC converters, load switches, and battery-powered devices.
Overall, the IRFD9024PBF is a reliable choice for designers seeking a P-channel MOSFET with good performance characteristics for power management applications.
Features
1. Voltage and Current: It operates with a drain-source voltage (Vds) of -60V and can handle a continuous drain current (Id) of -2.5A.
2. Rds(on): The MOSFET has a low on-resistance, with a maximum Rds(on) of around 0.5 ohms, which ensures efficient performance with minimal power loss.
3. Package Type: It is available in a compact through-hole DIP (Dual In-line Package), which makes it suitable for applications where space is a constraint.
4. Temperature Range: The device functions effectively within a wide temperature range, making it reliable for use in various environmental conditions.
5. Lead-Free and RoHS Compliant: The IRFD9024PBF is lead-free and compliant with RoHS standards, making it environmentally friendly.
6. Fast Switching: The MOSFET offers fast switching speeds, which is beneficial for high-speed applications.
These features make the IRFD9024PBF suitable for use in power management, small signal switching, and other applications requiring reliable performance in a compact form factor.
Package
Pinout
1. Pin 1 (Gate): This is the control terminal for the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Pin 2 (Drain): Current flows from the drain to the source when the MOSFET is turned on.
3. Pin 3 (Source): This is the terminal through which current exits when the MOSFET is conducting.
4. Pin 4 (Drain): This is internally connected to Pin 2, serving as a redundant or alternate drain connection point.
The IRFD9024PBF is typically used in applications requiring high-speed switching, such as power management, motor control, and DC-DC converters. Its P-channel configuration means it can be used for high-side switching.
Manufacturer
Application
Equivalent
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Zahlungen
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