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IRFH5010TRPBF
MOSFET N-CH 100V 13A/100A 8PQFN
- Hersteller
- Fr. Teil #IRFH5010TRPBF
- Paket PQFN-8
- Datenblatt IRFH5010TRPBF DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Ta), 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 9mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 98 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4340 pF @ 25 V |
| PowerDissipation(Max) | 3.6W (Ta), 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
Übersicht
Description
With a maximum drain-source voltage rating and high current handling capability, IRFH5010TRPBF is ideal for both low-voltage and high-voltage applications. Its robust construction allows for reliable operation in various environmental conditions. Additionally, the device offers fast switching speeds, enhancing overall circuit performance in dynamic applications.
It is typically packaged in a compact TO-220 form factor, facilitating easy integration into various electronic designs. Overall, this MOSFET is an excellent choice for engineers seeking reliable and efficient solutions in their power electronic circuits.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 50A, allowing it to manage significant power loads.
3. On-Resistance: It features a low on-resistance (RDS(on)) typically around 10 mΩ, which reduces power loss and improves efficiency in switching applications.
4. Fast Switching: The IRFH5010TRPBF supports fast switching speeds, enhancing performance in high-frequency applications.
5. Package: It comes in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Gate Threshold Voltage: With a gate threshold voltage (VGS(th)) of 2 to 4V, it operates efficiently with standard gate drive voltages.
Overall, the IRFH5010TRPBF is ideal for power management, motor control, and other high-current applications.
Package
Pinout
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which current flows out.
3. Source (S) - The terminal through which current flows in.
4. Tab - Connects to the Source for better thermal performance; often connected to the heatsink.
5. Body Diode - Internal diode that allows current to flow in the reverse direction, providing protection in certain circuit configurations.
The IRFH5010TRPBF is commonly used in power management, motor control, and other high-efficiency switching applications.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
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