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IRFH5025TRPBF
MOSFET N-CH 250V 3.8A 8PQFN
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Spezifikationen
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 50 V |
| Power Dissipation (Max) | 3.6W (Ta), 8.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | IRFH5025 |
Übersicht
Description
Key characteristics include fast switching speeds, low gate charge, and high thermal stability, making it suitable for high-frequency applications. The IRFH5025TRPBF is typically housed in a TO-220 package, allowing for effective heat dissipation. When utilizing this component, proper thermal management and circuit design practices are essential to optimize performance and reliability. Overall, it serves as a versatile solution for engineers looking to enhance efficiency in their designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 25V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 50A, offering robust performance for high-load applications.
3. RDS(on): It features a low on-resistance (RDS(on)) of approximately 8 mΩ at a gate voltage (Vgs) of 10V, which helps reduce power losses during operation.
4. Package Type: The MOSFET comes in a TO-220 package, providing good thermal performance and easy mounting.
5. Fast Switching: It offers fast switching times, making it suitable for various high-frequency applications.
6. Thermal Resistance: The device has a low thermal resistance, contributing to effective heat dissipation.
Overall, the IRFH5025TRPBF is ideal for power applications requiring efficiency and reliability.
Package
Pinout
1. Gate (G): Pin for controlling the MOSFET; it requires a voltage to turn on/off the device.
2. Drain (D): Pin for the output connection; the current flows from drain to source when the MOSFET is on.
3. Source (S): Pin for the input connection; it typically connects to ground in low-side switching configurations.
4. Additional pins: There are additional pins for other functions or to improve thermal performance, but the core functionality revolves around the gate, drain, and source.
The IRFH5025TRPBF is designed for high-speed switching applications and can handle high currents and voltages, making it suitable for power management in various electronic circuits.
Manufacturer
Application
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Versand
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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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