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IRFH5301TRPBF
MOSFET N-CH 30V 35A/100A PQFN
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- Fr. Teil #IRFH5301TRPBF
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- Datenblatt IRFH5301TRPBF DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.85mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5114 pF @ 15 V |
| Power Dissipation (Max) | 3.6W (Ta), 110W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (5x6) Single Die |
| Package / Case | 8-PowerVDFN |
| Base Product Number | IRFH5301 |
Übersicht
Description
Without specific context or details about the course content, it's challenging to provide a precise introduction. Generally, courses like IRFH5301TRPBF are designed for individuals seeking to deepen their understanding of specialized topics, preparing them for careers in academia, policy-making, or related fields. For a thorough overview, one would typically refer to the syllabus or course description provided by the educational institution.
Features
1. Voltage Rating: The device has a maximum V_DS (drain-source voltage) of 30V, suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 58A, making it ideal for high-current applications.
3. R_DS(on): It offers a low on-resistance (typically around 8.5 mΩ at V_GS = 10V), which reduces power losses during operation.
4. Fast Switching: The MOSFET is optimized for fast switching speeds, enhancing efficiency in switching power supplies.
5. Package Type: Available in a TO-220 package, it provides good thermal performance allowing for better heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, facilitating easy drive with standard logic levels.
These features make the IRFH5301TRPBF suitable for various applications, including DC-DC converters, motor drivers, and power switches.
Package
Pinout
1. Gate (G) - Controls the MOSFET operation by allowing or blocking current based on the voltage applied.
2. Drain (D) - The output terminal where the current flows out when the device is on.
3. Source (S) - The terminal through which the current enters the MOSFET when it is conducting.
4. Bulk (B) - Internal connection for substrate; typically connected to source.
The pin configuration is typically in a TO-220 package format, with the gate, drain, and source arranged for easy mounting and heat dissipation. This MOSFET is designed for high-efficiency power switching applications with low on-resistance and fast switching capabilities.
For specific circuit designs, refer to the manufacturer's datasheet for detailed electrical characteristics and additional application notes.
Manufacturer
Application
Equivalent
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Zahlungen
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