IRFH8202TRPBF

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IRFH8202TRPBF

MOSFET N-CH 25V 47A/100A 8PQFN

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®, StrongIRFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 25 V
Current-ContinuousDrain(Id)@25°C 47A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.05mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2.35V @ 150µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 7174 pF @ 13 V
PowerDissipation(Max) 3.6W (Ta), 160W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Übersicht

Description

IRFH8202TRPBF is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. This device is designed for high-efficiency switching applications, commonly used in power management, automotive, and industrial sectors. The IRFH8202TRPBF features low on-resistance, which minimizes power loss and improves thermal performance, making it suitable for high-current operations.
With a maximum drain-source voltage (VDS) rating of 80V and a continuous drain current (ID) of up to 24A, this MOSFET is capable of handling substantial loads. It also includes a built-in gate protection feature, enhancing its durability and reliability in circuit applications.
The "TRPBF" suffix indicates that the product is lead-free and compliant with RoHS (Restriction of Hazardous Substances) standards, aligning with environmental regulations. Overall, the IRFH8202TRPBF is ideal for designers seeking efficient and reliable performance in various electronic applications.

Features

The IRFH8202TRPBF is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 60A, allowing substantial current flow.
3. Low R_DS(on): The on-resistance is typically low (around 7.3 mΩ), which minimizes power losses and improves thermal performance.
4. Fast Switching Speed: The MOSFET offers high-speed switching capabilities, enhancing efficiency in applications like DC-DC converters and motor drives.
5. Package: It comes in a compact TO-220 package, facilitating efficient heat dissipation.
6. Thermal Resistance: The device has a low thermal resistance, allowing for better thermal management.
Overall, the IRFH8202TRPBF is ideal for applications requiring low power loss, high efficiency, and compact design in power electronics.

Package

The IRFH8202TRPBF is packaged in a TO-220 package type. This package is commonly used for power MOSFETs and allows for efficient heat dissipation and easy mounting on heatsinks.

Pinout

The IRFH8202TRPBF is a N-channel MOSFET with a pin count of 8. Its primary function is to serve as a switching device in various power management applications, such as DC-DC converters and motor control circuits. The device features low on-resistance and high-speed operation, making it suitable for efficient power switching.
The pin configuration is as follows:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Source (S) - (for thermal management)
5. Drain (D) - (for thermal management)
6. Drain (D)
7. Gate (G) - (for thermal management)
8. No connection (NC)
It is packaged in a DPAK (TO-252) format, which allows for effective thermal dissipation. The IRFH8202TRPBF is designed for applications requiring high efficiency and reliability in power conversion and switching tasks.

Manufacturer

The IRFH8202TRPBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions, including power management, automotive, and security applications. The company is known for its innovative technologies in power electronics, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. Infineon aims to contribute to energy efficiency and sustainability through its advanced semiconductor products.

Application

The IRFH8202TRPBF is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor drivers, and load switches. It is suitable for use in high-efficiency power supplies, battery management systems, and automotive applications due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in telecommunications and industrial equipment for efficient power control.

Equivalent

The IRFH8202TRPBF is a high-performance N-channel MOSFET. Equivalent products include:
1. FQP30N10 - Fairchild Semiconductor
2. STP30NF10 - STMicroelectronics
3. IRF320 - International Rectifier
4. BSS138 - Vishay
Always verify specifications such as voltage, current, and Rds(on) before substitution.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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