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IRFI3205PBF
MOSFET N-CH 55V 64A TO220AB FP
- Hersteller
- Fr. Teil #IRFI3205PBF
- Paket TO-220-3
- Datenblatt IRFI3205PBF DataSheet
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Spezifikationen
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 64A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8mOhm @ 34A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 170 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4000 pF @ 25 V |
| PowerDissipation(Max) | 63W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB Full-Pak |
Übersicht
Description
The "PBF" designation indicates that the MOSFET is lead-free and compliant with RoHS (Restriction of Hazardous Substances) regulations, making it environmentally friendly. Typically, it comes in a TO-220 or similar package, facilitating easy heat dissipation and integration into circuits.
Overall, IRFI3205PBF is a reliable choice for engineers seeking efficient and robust performance in their electronic designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 55V, making it suitable for various power applications.
2. Current Handling: The device can handle continuous drain currents of up to 110A, ensuring robust performance in demanding environments.
3. On-State Resistance: It boasts a low Rds(on) of approximately 8 mΩ at a gate-source voltage (Vgs) of 10V, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The MOSFET supports high-speed switching, enhancing the performance of converters and motor drivers.
5. Thermal Management: It features a low thermal resistance, which aids in heat dissipation, ensuring reliable operation.
6. Package Type: Typically available in TO-220 and DPAK packages, facilitating easy integration into circuits.
These characteristics make the IRFI3205PBF suitable for applications in power supplies, motor control, and DC-DC converters.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching. A voltage applied to this pin allows current to flow from the drain to source.
2. Drain (D): This pin serves as the output where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit. It serves as the return path for current flowing through the device.
4. Body (internal): The body diode is internally connected, allowing current to flow in the reverse direction when needed.
5. Tab (thermal): Typically used for heat dissipation, providing a thermal pathway to manage heat generated during operation.
This MOSFET is commonly used in power applications due to its low on-resistance and high efficiency.
Manufacturer
Application
Equivalent
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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