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IRFP150A
MOSFET N-CH 100V 43A TO3PN
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- Fr. Teil #IRFP150A
- Paket
- Datenblatt IRFP150A DataSheet
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Spezifikationen
| Supplier | onsemi |
| Package | Tube |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 43A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 40mOhm @ 21.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 97 nC @ 10 V |
| InputCapacitance(Ciss)(Max)@Vds | 2270 pF @ 25 V |
| PowerDissipation(Max) | 193W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-3PN |
Übersicht
Description
It operates effectively in both linear and switching modes, providing versatility in circuit designs. The IRFP150A's maximum gate threshold voltage is between 2-4V, allowing for easy interfacing with standard logic levels. Its robust construction and thermal properties support reliable operation in demanding environments.
Overall, the IRFP150A is a reliable choice for engineers looking for a high-performance MOSFET in various applications requiring efficient power management.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various applications.
2. Current Rating: The maximum continuous drain current (I_D) is 55A, allowing it to handle significant loads.
3. R_DS(on): Low on-resistance of approximately 0.05 ohms, enhancing efficiency by reducing power losses during operation.
4. Fast Switching: Designed for high-speed switching applications, it minimizes switching losses.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, compatible with low-voltage drive circuits.
6. Package Type: Typically available in TO-220 or similar packages, facilitating heat dissipation.
These features make the IRFP150A ideal for applications such as power supplies, motor drivers, and DC-DC converters, where high efficiency and reliability are crucial.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to this pin turns the device on or off.
2. Drain (D): The drain pin is where the load connects. Current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for current flowing through the MOSFET.
The IRFP150A is designed for high-power applications, with a maximum drain-source voltage of 110V and a continuous drain current rating of 33A. It is commonly used in power switches, inverters, and motor control applications.
Manufacturer
Application
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Zahlungen
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