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IRFP150NPBF
MOSFET N-CH 100V 42A TO247AC
- Hersteller
- Fr. Teil #IRFP150NPBF
- Paket TO-247-3
- Datenblatt IRFP150NPBF DataSheet
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Spezifikationen
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 42A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 36mOhm @ 23A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1900 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
Übersicht
Description
Key specifications include a low on-resistance (R_DS(on)) of approximately 0.085 ohms, which minimizes power loss during operation. The device has a maximum gate-to-source voltage of ±20V and can operate across a wide temperature range, enhancing its performance in various environments.
The IRFP150NPBF is packaged in a TO-220 format, allowing for effective heat dissipation. Its robust design and high-performance characteristics make it a popular choice for engineers and designers looking for reliable power management solutions in industrial and consumer electronics applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 94A, which allows for significant power handling.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of around 0.05 ohms, ensuring efficient conduction and minimal power loss during operation.
4. Gate Charge: The gate charge (Q_g) is approximately 100 nC, allowing for faster switching speeds.
5. Package: Typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Thermal Resistance: It features low thermal resistance, enabling better heat management in applications.
7. Applications: Commonly used in power management, motor control, and RF amplifiers.
These characteristics make the IRFP150NPBF suitable for various high-efficiency power applications.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin is where the output current flows into the MOSFET. It connects to the load and serves as the terminal for the high side of the circuit.
3. Source (S) - This pin is the terminal through which the current exits the MOSFET. It typically connects to ground or the lower potential in the circuit.
The IRFP150NPBF is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for power electronics.
Manufacturer
Application
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Versand
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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2. Kredit- / Debitkarte
3. Überweisung
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