IRFP3077PBF

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IRFP3077PBF

MOSFET N-CH 75V 120A TO247AC

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Spezifikationen

Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 50 V
Power Dissipation (Max) 340W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number IRFP3077

Übersicht

Description

The IRFP3077PBF is a high-performance N-channel MOSFET designed for power applications. It features a low on-resistance (R_DS(on)) of around 3.5 mΩ, making it suitable for high-efficiency switching applications. With a maximum drain-source voltage (V_DS) of 75V and a continuous drain current (I_D) of 120A, it is ideal for use in power supplies, motor drivers, and renewable energy systems.
The MOSFET has a fast switching speed, allowing for reduced switching losses, which enhances overall system efficiency. It also comes in a TO-220 package, facilitating effective heat dissipation and making it easier to integrate into various circuit designs. The "PBF" designation indicates that it is lead-free, ensuring compliance with RoHS standards.
Overall, the IRFP3077PBF is a versatile component for engineers looking to optimize performance in high-power applications while maintaining energy efficiency.

Features

The IRFP3077PBF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Maximum Drain-Source Voltage (V_DS) of 75V, suitable for various power applications.
2. Current Handling: Continuous drain current (I_D) of up to 80A, allowing for significant power handling.
3. On-Resistance: Low R_DS(on) of approximately 4.5 mΩ, which reduces power loss during operation.
4. Gate Threshold Voltage: V_GS(th) ranges between 2V to 4V, providing flexibility in gate driving.
5. Package: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: Suitable for high-speed switching applications, enhancing overall efficiency.
7. Reliability: Robust design for high thermal performance and reliability in demanding environments.
Overall, the IRFP3077PBF is ideal for switching power supplies, motor drives, and automotive applications.

Package

The IRFP3077PBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used for power MOSFETs in applications requiring efficient thermal management.

Pinout

The IRFP3077PBF is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied to the gate relative to the source controls the flow of current between the drain and source.

2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is the output terminal of the MOSFET, where the current exits. It is typically connected to ground in common-source configurations.
The additional two pins are for the thermal and packaging features, which may include a substrate connection or other internal functions as specified in the datasheet. The IRFP3077PBF is designed for high power applications, featuring low on-resistance and high-speed switching capabilities.

Manufacturer

The IRFP3077PBF is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is headquartered in Neubiberg, Germany, and specializes in a broad range of products, including power semiconductors, automotive electronics, and industrial automation solutions. The company focuses on high-performance components that enhance energy efficiency, safety, and connectivity in various applications, from automotive and industrial systems to consumer electronics. Infineon is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

The IRFP3077PBF is a high-power N-channel MOSFET primarily used in applications such as power supplies, motor drives, and automotive systems. Its low on-resistance and high-speed switching capabilities make it suitable for DC-DC converters, inverters, and renewable energy systems. Additionally, it can be utilized in audio amplifiers and other high-efficiency electronic devices.

Equivalent

The IRFP3077PBF is an N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and MTP75N75. Always verify specifications such as voltage, current rating, and RDS(on) to ensure compatibility for your specific application.

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