IRFP360

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IRFP360

MOSFET N-CH 400V 23A TO247-3

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Spezifikationen

Supplier Vishay Siliconix
Package Tube
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V
Current-ContinuousDrain(Id)@25°C 23A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 200mOhm @ 14A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4500 pF @ 25 V
PowerDissipation(Max) 280W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Übersicht

Description

IRFP360 is a high-voltage N-channel power MOSFET from International Rectifier (now Infineon). It’s used in switching power supplies, inverters, and motor drives where a robust, fast-switching device is needed.
Key points:
- Type: N-channel enhancement-mode MOSFET.
- Rating focus: high drain–source voltage (around 200 V class) with a few amperes of continuous current depending on package and cooling.
- On-resistance: relatively low, but not a “logic-level” device; full enhancement typically requires ~10–12 V gate drive.
- Gate drive: avoid 5 V for full conduction; drive with proper gate drive circuitry and gate resistors.
- Packaging: common power packages such as TO-220 or similar D2PAK variants.
- Use notes: requires adequate heat sinking, and attention to SOA, avalanche, and protection (snubbers, flyback diodes, dead-time) in inductive loads.
For exact electrical ratings and package options, consult the official datasheet.

Features

Key features of IRFP360 (N‑channel power MOSFET):
- N‑channel enhancement‑mode power MOSFET
- VDS: 200 V
- Continuous ID: around 8 A (typical)
- RDS(on): typically under 1 Ω (roughly 0.8 Ω, max around 1.5 Ω)
- Gate drive: VGS(th) ~2–4 V; 10 V drive recommended for lowest RDS(on)
- Fast switching with low input capacitance and low Qg
- Robust avalanche energy rating for rugged switching
- Package: through‑hole TO‑220AB (also available in other variants)
- Wide operating temperature: typically −55 °C to +150 °C
- Applications: high‑voltage switching regulators, DC‑DC converters, motor control, inverters
Note: exact numbers can vary by lot and package variant; consult the datasheet for precise specifications.

Package

The IRFP360 is an N-channel power MOSFET typically supplied in a TO-220 (TO-220AB) three-lead through-hole power package. Check the manufacturer's datasheet for exact outlines and any variants.

Pinout

The IRFP360 is an N‑channel power MOSFET with 3 external pins. Their functions are:
- Pin 1: Gate (G) — control electrode that turns the MOSFET on/off.
- Pin 2: Drain (D) — power input/output; usually the center lead and the metal tab/heatsink are electrically tied to the drain.
- Pin 3: Source (S) — return/reference terminal for the device.
(Typical front-view pin order for TO‑247/TO‑220 packages: Gate, Drain, Source; metal tab = Drain.)

Manufacturer

The IRFP360 is an N‑channel power MOSFET originally manufactured by International Rectifier (IR). International Rectifier was an American semiconductor company specializing in power-management products and discrete power semiconductors (power MOSFETs, IGBTs, drivers). In 2015 IR was acquired by Infineon Technologies, a German semiconductor firm that now supplies many IR-branded power devices.

Application

IRFP360 is a high‑voltage N‑channel power MOSFET. Common application areas:
- Offline/high‑voltage switching power supplies (SMPS)
- DC–DC converters and regulator stages
- Power inverters and motor‑drive/PWM stages
- Solar/battery power conditioning and UPS systems
- Class D audio amplifiers and other high‑speed switching topologies
- Pulsed‑power, induction heating and related high‑voltage switching tasks

Equivalent

I can help, but need the IRFP360 specs you require (Vds, Id, Rds(on), package, switching speed, application). Provide those and I’ll list suitable equivalent MOSFET part numbers.

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