IRFP4229PBF

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IRFP4229PBF

IRFP4229 - 12V-300V N-CHANNEL PO

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  • Fr. Teil #IRFP4229PBF
  • Paket TO-247-3
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  • Auf Lager7245

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Spezifikationen

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 44A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 46mOhm @ 26A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4560 pF @ 25 V
PowerDissipation(Max) 310W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Übersicht

Description

The IRFP4229PBF is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vds) of 55V and a continuous drain current (Id) of up to 70A, making it suitable for a variety of switching and amplification tasks.
This MOSFET has a low on-resistance (Rds(on)), which minimizes power losses during operation, enhancing efficiency. It also has a fast switching speed, contributing to improved performance in high-frequency applications. The device comes in a TO-220 package, facilitating heat dissipation and ease of mounting in circuit boards.
The IRFP4229PBF is commonly used in power supplies, motor drivers, and other applications requiring efficient power switching. It's also RoHS compliant, indicating it meets environmental standards for hazardous substances. Overall, it’s a reliable choice for engineers seeking effective solutions in power electronics.

Features

The IRFP4229PBF is an N-channel MOSFET designed for high-performance applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 70A at 25°C, ensuring robust performance under load.
- R_DS(on): The on-resistance is low, typically around 10 mΩ at V_GS = 10V, which helps in reducing power losses and improving efficiency.
- Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2V to 4V, allowing for effective switching control.
- Package Type: It is available in a TO-220 package, which aids in heat dissipation.
- Fast Switching: Suitable for applications requiring rapid switching, such as in power supplies and motor control.
These attributes make the IRFP4229PBF ideal for use in power electronics, including inverters and converters.

Package

The IRFP4229PBF is packaged in a TO-220 form factor, which is a metal case with three leads. This package is designed for high-power applications and provides effective heat dissipation.

Pinout

The IRFP4229PBF is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation, allowing it to turn on or off based on the voltage applied.
2. Drain (D): The main current-carrying terminal where the load is connected. The current flows from the drain to the source when the device is on.
3. Source (S): This pin is the terminal through which the current exits the MOSFET. It is typically connected to ground in common configurations.
The additional two pins are usually used for heat dissipation (tab or case) and should be connected to the heat sink for proper thermal management. The IRFP4229PBF is designed for high-speed switching applications and can handle significant voltage and current, making it suitable for power electronics applications.

Manufacturer

The IRFP4229PBF is manufactured by Infineon Technologies AG. Infineon is a semiconductor manufacturer based in Germany that specializes in producing a wide range of semiconductor solutions. The company focuses on areas such as automotive, industrial power control, and security technologies. Infineon is known for its innovation in power management and efficiency, providing components for various applications, including renewable energy systems, electric vehicles, and consumer electronics. It is a key player in the semiconductor industry, emphasizing sustainability and advanced technologies.

Application

The IRFP4229PBF is a N-channel MOSFET primarily used in power management applications. Its areas of application include motor control, power supplies, DC-DC converters, and high-frequency switching circuits. It is suitable for use in renewable energy systems, electric vehicles, and industrial automation due to its high efficiency and thermal performance.

Equivalent

The IRFP4229PBF is a N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and IXFH44N50P. Always verify specifications such as voltage, current rating, and RDS(on) for proper compatibility in your application.

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