IRFP4468PBF

Bilder sind nur zur Referenz

IRFP4468PBF

IRFP4468 - 12V-300V N-CHANNEL PO

  • Hersteller
  • Fr. Teil #IRFP4468PBF
  • Paket TO247
  • Datenblatt
  • Auf Lager7666

100% Original und Neu

24 Stunden bereit zum Versand

365 Tage Garantie

RFQ & Erhalten Sie mehr Rabatte

Spezifikationen

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 195A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.6mOhm @ 180A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 540 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 19860 pF @ 50 V
PowerDissipation(Max) 520W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Übersicht

Description

The IRFP4468PBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-performance power applications. It features a low on-resistance (R_DS(on)) and high current capacity, making it suitable for use in power management, motor control, and switching applications. With a maximum drain-source voltage (V_DSS) of 55V and a continuous drain current (I_D) of around 90A, it can efficiently handle significant power loads.
The device operates with a threshold voltage (V_GS(th)) between 2V to 4V, which allows for efficient driving with low gate voltages. Its fast switching speeds and low gate charge (Q_g) contribute to improved efficiency in circuits, minimizing power losses. The IRFP4468PBF is also packaged in a TO-220 format, which aids in heat dissipation.
This MOSFET is ideal for use in applications where thermal management and efficiency are critical, such as in automotive, renewable energy systems, and industrial automation. Its robustness and reliability make it a popular choice among engineers designing power electronic circuits.

Features

The IRFP4468PBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V.
2. Continuous Drain Current: Can handle a continuous current of up to 80A, making it suitable for power applications.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of about 8 mΩ (at V_GS = 10V), enhancing efficiency and reducing heat generation.
4. Fast Switching Speed: Designed for rapid switching, which is beneficial in applications like power supplies and motor drives.
5. Thermal Performance: Features a maximum junction temperature of 175°C, allowing for robust operation in demanding environments.
6. TO-220 Package: Housed in a TO-220 package, facilitating effective heat dissipation.
7. Applications: Ideal for use in automotive, industrial, and power management systems.
This combination of features makes the IRFP4468PBF suitable for a wide range of power-related applications.

Package

The IRFP4468PBF is packaged in a TO-220 casing. This package type features a three-pin configuration, providing robust thermal performance and ease of mounting for power applications.

Pinout

The IRFP4468PBF is an N-channel MOSFET with a total of 3 pins.
Pin Configuration:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The current flows into this pin when the MOSFET is on. It connects to the load in a switching application.
3. Source (S): This pin is the output. It connects to the ground or negative side of the power supply.
Functionality:
The IRFP4468PBF is designed for high-efficiency switching applications, such as inverters and power converters. With a low on-resistance (R_DS(on)) and high breakdown voltage, it is suitable for handling significant power levels in various electronic circuits.

Manufacturer

The IRFP4468PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power semiconductors, microcontrollers, and sensors. The company focuses on various markets, including automotive, industrial, and consumer electronics, providing innovative solutions that enhance energy efficiency and performance. Infineon is known for its commitment to sustainability and advancing technologies in areas such as electric mobility and the Internet of Things (IoT).

Application

The IRFP4468PBF is a high-performance N-channel MOSFET used in various applications, including power supplies, motor drives, and inverters. It is suitable for switching applications in industrial equipment, solar inverters, and electric vehicles due to its low on-resistance and high-speed switching capabilities. Additionally, it can be utilized in DC-DC converters and audio amplifier output stages.

Equivalent

Equivalent products to the IRFP4468PBF MOSFET include the IRF3205, STP75NF75, and FDP7530. These MOSFETs share similar voltage and current ratings, typically suitable for high-speed switching applications. Always verify specifications such as Rds(on), Vds, and Id to ensure compatibility for your specific application.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:

1. PayPal

2. Kredit- / Debitkarte

3. Überweisung