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IRFP4668PBF
MOSFET N-CH 200V 130A TO247AC
- Hersteller
- Fr. Teil #IRFP4668PBF
- Paket TO247
- Datenblatt IRFP4668PBF DataSheet
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Spezifikationen
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 9.7mOhm @ 81A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 241 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 10720 pF @ 50 V |
| PowerDissipation(Max) | 520W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
Übersicht
Description
With a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 90A, the IRFP4668PBF is capable of handling substantial power levels, making it suitable for demanding electronic applications. The device also has a fast switching speed, enabling efficient operation in high-frequency circuits.
Its package type, typically available in TO-220 or similar formats, provides good thermal performance, facilitating heat dissipation. The “PBF” designation indicates that it is lead-free, complying with environmental regulations. Overall, the IRFP4668PBF is an effective choice for applications requiring reliable switching and high current handling capabilities.
Features
1. Low RDS(on): Offers an on-resistance of 0.025 ohms (max) at VGS = 10V, enhancing efficiency and reducing heat generation.
2. High Voltage Rating: Supports a maximum drain-source voltage (VDS) of 60V, suitable for various power management applications.
3. High Current Capability: Capable of handling continuous drain current (ID) up to 80A, making it suitable for demanding load applications.
4. Fast Switching Speed: Provides quick switching times, which improves efficiency in high-frequency applications.
5. Robust Thermal Performance: Features a maximum junction temperature of 175°C, allowing for reliable operation under high-temperature conditions.
6. TO-220 Package: Comes in a TO-220 package, facilitating easy heat dissipation and integration into circuit boards.
Overall, the IRFP4668PBF is ideal for power supplies, motor drivers, and other high-efficiency power applications.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate relative to the source allows the MOSFET to turn on (conduct) or off (not conduct).
2. Drain (D) - This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is the terminal through which the current exits the MOSFET when it is conducting. It is typically connected to ground or the negative side of the power supply in an N-channel configuration.
The IRFP4668PBF is designed for high-speed switching applications and can handle significant power levels, making it suitable for various electronic applications.
Manufacturer
Application
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Versand
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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
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Zahlungen
Payment Methods
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