IRFPG50PBF

Bilder sind nur zur Referenz

IRFPG50PBF

MOSFET N-CH 1000V 6.1A TO247-3

100% Original und Neu

24 Stunden bereit zum Versand

365 Tage Garantie

RFQ & Erhalten Sie mehr Rabatte

Spezifikationen

Part Status Active
Base Product Number IRFPG50
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package TO-247-3
Packaging Tube

Übersicht

Description

The IRFPG50PBF is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by International Rectifier. It is designed for high-efficiency switching applications, commonly used in power supplies, motor control, and automotive electronics.
Key specifications include a maximum drain-source voltage (V_DS) of 50V, a continuous drain current (I_D) of 50A, and a low on-resistance (R_DS(on)) of approximately 0.05 ohms, which enhances its efficiency during operation. The device features a TO-220 package, allowing for effective heat dissipation.
The IRFPG50PBF is built using advanced technology that offers fast switching speeds and low threshold voltage, making it suitable for various applications including synchronous rectification and DC-DC converters. Furthermore, it is RoHS compliant and designed to meet strict environmental standards, making it a reliable choice for modern electronic designs.

Features

The IRFPG50PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. Key features include:
1. VDS Rating: 500V maximum drain-source voltage, making it suitable for high-voltage applications.
2. ID Rating: Continuous drain current of up to 9.2A at 25°C, allowing for efficient power handling.
3. RDS(on): Low on-resistance (typically 0.55 ohms at VGS = 10V), which minimizes power losses during operation.
4. Gate Threshold Voltage (VGS(th)): Ranges from 2V to 4V, facilitating operation with standard gate drive voltages.
5. Fast Switching: Capable of high-speed switching, which is beneficial in applications such as switching power supplies and inverters.
6. Package: Available in TO-220 and D2PAK packages, providing flexibility in mounting and heat dissipation.
These features make the IRFPG50PBF suitable for various uses, including power management, motor control, and other high-voltage switching applications.

Package

The IRFPG50PBF is packaged in a TO-220 format, which is a type of metal case package designed for power devices. It provides efficient thermal management and is suitable for high-power applications.

Pinout

The IRFPG50PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. It connects to the load.
3. Source (S): This pin is the output of the MOSFET. It connects back to the ground or the negative side of the power supply.
The IRFPG50PBF is designed for high-speed switching applications and can handle high voltage and current, making it suitable for power management and conversion applications.

Manufacturer

The IRFPG50PBF is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power management, automotive, industrial, and communication technologies. The company is known for its innovations in power semiconductors, such as MOSFETs and IGBTs, and plays a significant role in various applications, including renewable energy, electric vehicles, and smart grid solutions. Infineon is recognized for its commitment to sustainability and advancing technology for a connected world.

Application

The IRFPG50PBF is an N-channel MOSFET primarily used in power management applications. Its key areas include:
1. Power Supply Circuits: For switching and regulation.
2. Motor Control: In various industrial and consumer motor drivers.
3. DC-DC Converters: Enhancing efficiency in conversion processes.
4. Lighting Applications: Such as LED driving.
5. Automotive Applications: For power handling in electric vehicles and control systems.
Its high voltage and current ratings make it suitable for these demanding applications.

Equivalent

The IRFPG50PBF is an N-channel MOSFET. Equivalent products include:
1. STP50NF06
2. FQP50N06L
3. AOD5040
4. MTP50N06
5. IRF510
Always verify specifications like voltage, current rating, and Rds(on) to ensure compatibility for your specific application.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:

1. PayPal

2. Kredit- / Debitkarte

3. Überweisung

Ähnliche