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IRFPS40N50LPBF
MOSFET N-CH 500V 46A SUPER247
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Spezifikationen
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 28A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110 pF @ 25 V |
| Power Dissipation (Max) | 540W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Package / Case | TO-274AA |
| Base Product Number | IRFPS40 |
Übersicht
Description
The IRFPS40N50LPBF is commonly used in power supply circuits, motor drives, and other high-efficiency switching applications. Its high breakdown voltage and robust performance characteristics make it suitable for applications requiring high reliability under demanding conditions.
This MOSFET is also RoHS compliant, indicating it is free from hazardous substances, thereby meeting modern environmental standards. Overall, the IRFPS40N50LPBF is a versatile component for engineers designing power electronics systems.
Features
- Voltage Rating: 500V, making it suitable for high-voltage applications.
- Current Rating: Continuous drain current of up to 40A, providing robust performance.
- RDS(on): Low on-resistance of approximately 0.25 ohms, enhancing energy efficiency and reducing heat generation.
- Gate Threshold Voltage (Vgs): Low threshold voltage, enabling easier drive in low-voltage circuits.
- Fast Switching: Capable of high-speed switching, which is ideal for applications such as power management and DC-DC converters.
- Package Type: Offered in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
The IRFPS40N50LPBF is suitable for applications in power supplies, motor drives, and renewable energy systems, where efficiency and reliability are critical. Its RoHS-compliant construction also ensures environmental safety.
Package
Pinout
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is switched on.
3. Source (S): This pin is where the current exits the MOSFET when it is in the on state.
4. Body Diode: Internally connected between the drain and source, allowing current to flow in the reverse direction, useful for certain applications.
5. Thermal Pad: Often included in packaging for heat dissipation.
The IRFPS40N50LPBF is designed for high voltage applications, featuring a maximum drain-source voltage (V_DS) of 500V and a maximum continuous drain current of 40A, making it suitable for power management and control in various electronic circuits.
Manufacturer
Application
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Zahlungen
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