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IRFR024TRPBF
MOSFET N-CH 60V 14A DPAK
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- Datenblatt IRFR024TRPBF DataSheet
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Spezifikationen
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 8.4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 640 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 42W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
Übersicht
Description
Key specifications typically include a maximum drain-source voltage (V_DS), a specified continuous drain current (I_D), and a threshold voltage (V_GS(th)). These parameters determine its efficiency and effectiveness in various circuit designs. The IRFR024TRPBF is also RoHS-compliant, ensuring it meets environmental regulations regarding hazardous substances. Its compact surface-mount package allows for efficient space utilization on PCBs.
Overall, this MOSFET is valued for its reliability, efficiency, and versatility in modern electronic applications.
Features
1. Voltage Rating: It typically supports a maximum drain-source voltage (VDS) of 25V.
2. Current Rating: It can handle continuous drain currents up to 24A, making it robust for power applications.
3. On-Resistance: Low on-resistance (around 0.020Ω) at VGS = 10V, facilitating efficient operation and minimizing heat generation.
4. Gate Threshold Voltage: It has a low gate threshold voltage (VGS(th)) around 2-4V, enabling it to switch on with lower gate voltages.
5. Package: Available in a TO-220 package, providing good thermal performance.
6. Fast Switching Speed: Ideal for high-frequency applications due to rapid switching capabilities.
7. Applications: Commonly used in DC-DC converters, motor drivers, and other power electronic circuits.
These features make the IRFR024TRPBF a versatile choice for designers looking for efficient and reliable MOSFET solutions.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching; applying a voltage to this pin turns the device on or off.
2. Drain (D): The main output terminal where current flows out when the MOSFET is on.
3. Source (S): The terminal where current enters the device; it is typically connected to ground in low-side switching applications.
4. Tab (T): The thermal pad used for heat dissipation; it is often connected to the source in applications to help manage heat.
The IRFR024TRPBF is commonly used in power switching applications due to its low on-resistance and high-speed switching capabilities.
Manufacturer
Application
Equivalent
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
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