IRFR110TRPBF

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IRFR110TRPBF

MOSFET N-CH 100V 4.3A DPAK

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Spezifikationen

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 540mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number IRFR110

Übersicht

Description

The IRFR110TRPBF is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies, previously under International Rectifier. This component is designed for high-efficiency power management applications and is commonly used in various electronic devices for switching and amplifying electronic signals. The "T" in the part number indicates it is part of a series with specific packaging or performance characteristics.
Key features of the IRFR110TRPBF include:
1. Voltage and Current Ratings: It typically operates at high voltage and current levels, making it suitable for controlling larger loads.

2. Enhancement Mode: The device is usually an N-channel enhancement mode MOSFET, meaning it requires a positive gate-source voltage to conduct.
3. Low On-Resistance: It offers low resistance when in the "on" state, reducing power loss and increasing efficiency.
4. Ruggedness: Known for reliability and ability to handle high power pulses.
These characteristics make the IRFR110TRPBF ideal for use in power supply applications, motor controllers, and other areas requiring efficient power switching. Always refer to the datasheet for detailed specifications and application guidelines.

Features

The IRFR110TRPBF is a power MOSFET designed for a variety of applications. Key features include:
1. N-channel MOSFET: It is an N-channel device, which is typically used for high-speed switching applications.
2. Voltage and Current Ratings: The device supports a drain-to-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 3.6A at 25°C.
3. R_DS(on): The on-resistance is low, approximately 0.28 ohms, enabling efficient performance with minimal power loss.
4. Package: It comes in a D-Pak (TO-252) surface-mount package, which is conducive to automated assembly and suited for compact PCB layouts.
5. Temperature Range: The operating junction temperature range is from -55°C to 175°C, making it suitable for a wide range of environmental conditions.
6. Fast Switching: The MOSFET is designed for fast switching, which is beneficial in applications requiring high efficiency and performance.
7. RoHS Compliant: It is lead-free and RoHS compliant, aligning with environmental regulations.
These features make the IRFR110TRPBF suitable for use in power management, DC-DC converters, and motor control applications.

Package

The IRFR110TRPBF is a MOSFET transistor typically packaged in a D-Pak (TO-252) surface-mount design. This package type offers efficient thermal performance and is commonly used in applications requiring compact mounting and robust power handling.

Pinout

The IRFR110TRPBF is a power MOSFET. It typically comes in a TO-252 (DPAK) package, which generally has three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This pin is the output of the MOSFET, where the current flows out from the device when it is turned on.
3. Source (S): This pin is the input of the MOSFET, where the current flows into the device.
Additionally, the tab on the DPAK package is typically connected to the drain, providing a path for heat dissipation. The IRFR110TRPBF is used in various applications requiring efficient switching and power management.

Manufacturer

The IRFR110TRPBF is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that specializes in designing, developing, manufacturing, and marketing a wide range of semiconductor solutions. These solutions are used in various applications, including automotive, industrial, consumer electronics, and security solutions. Infineon is known for its innovations in power semiconductors, microcontrollers, sensors, and other advanced technologies that cater to the needs of modern electronic systems.

Application

The IRFR110TRPBF is a power MOSFET used in various applications including power management, DC-DC converters, and motor control circuits. Its low on-resistance and fast switching capabilities make it suitable for efficiency-critical applications such as battery-powered devices, automotive systems, and industrial automation equipment. Additionally, it is used in switching power supplies and load switching applications.

Equivalent

The IRFR110TRPBF is a N-channel MOSFET. Equivalent products include the NXP BUK96150-55A, ON Semiconductor NVMFS5C670NL, and Vishay SiR826DP. These equivalents are chosen based on similar voltage, current ratings, and package type, but always verify the specifications and manufacturer datasheets to ensure compatibility for your application.

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