IRFR5305TRPBF

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IRFR5305TRPBF

MOSFET P-CH 55V 31A DPAK

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 31A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 65mOhm @ 16A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 63 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1200 pF @ 25 V
PowerDissipation(Max) 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

Übersicht

Description

IRFR5305TRPBF appears to be a specific course code or identifier, likely related to a program in finance, investment, or risk management. However, without additional context, it's difficult to provide precise information. Typically, courses with such codes cover advanced topics related to financial risk management, investment strategies, or regulatory frameworks in finance.
The introduction to a course like IRFR5305TRPBF would usually outline the objectives, key concepts, and expected outcomes, emphasizing analytical skills, quantitative methods, and the application of theoretical principles to real-world financial issues. Participants might explore topics like risk assessment, portfolio management, financial instruments, and the impact of economic factors on investment decisions.
For detailed information, it's advisable to refer to the specific course syllabus or institutional resources associated with the course.

Features

The IRFR5305TRPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.

2. Current Rating: The device can handle a continuous drain current (I_D) of up to 55A, providing robust performance in various loads.
3. On-Resistance: The R_DS(on) is low, typically around 8 mΩ at a gate-to-source voltage (V_GS) of 10V, which ensures minimal power loss and heat generation during operation.
4. Gate Threshold Voltage: It features a threshold voltage (V_GS(th)) range of 1V to 3V, allowing for compatibility with low-voltage drive circuits.
5. Package Type: The IRFR5305TRPBF is available in a TO-220 package, facilitating heat dissipation and easy mounting.
6. Applications: Commonly used in power management, DC-DC converters, and motor control systems due to its efficiency and reliability.
Overall, the IRFR5305TRPBF is ideal for demanding applications requiring efficient switching and thermal performance.

Package

The IRFR5305TRPBF is packaged in a TO-220 type package. This package is commonly used for power MOSFETs, providing effective heat dissipation and ease of mounting.

Pinout

The IRFR5305TRPBF is an N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here turns the device on or off.

2. Drain (D) - This pin is connected to the load. The current flows from the drain to the source when the MOSFET is in the ‘on’ state.
3. Source (S) - This pin is connected to ground or the negative side of the power supply. Current exits through this pin when the device is conducting.
In summary, the IRFR5305TRPBF is a three-pin device with gate, drain, and source terminals, commonly used in switching and amplification applications.

Manufacturer

The IRFR5305TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer. Infineon specializes in the development of semiconductor solutions for various applications, including automotive, industrial, communication, and consumer electronics. They are known for their innovations in power management, sensor technology, and security solutions. Infineon Technologies is headquartered in Munich, Germany, and operates worldwide, contributing significantly to advancements in energy efficiency and sustainability through their products.

Application

The IRFR5305TRPBF is an N-channel MOSFET primarily used in applications such as power management, switching power supplies, motor control, and automotive systems. Its high-speed switching capabilities make it suitable for efficient power conversion and regulation in consumer electronics, industrial equipment, and renewable energy systems. Additionally, it is utilized in DC-DC converters and inverter circuits for various energy applications.

Equivalent

The IRFR5305TRPBF is an N-channel MOSFET. Equivalent products include the NXP BSS138, Fairchild FDS6680, and Vishay IRF5305. Always check specifications such as voltage, current ratings, and Rds(on) to ensure compatibility for your specific application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

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TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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