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IRFS3206TRRPBF
MOSFET N-CH 60V 120A D2PAK
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- Fr. Teil #IRFS3206TRRPBF
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- Datenblatt IRFS3206TRRPBF DataSheet
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Spezifikationen
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 170 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6540 pF @ 50 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Übersicht
Description
The “3206” in the designation usually signifies specific features such as output voltage, current ratings, or package type, while "TRRPBF" indicates that it is a surface mount component (often in a specific package style) and is RoHS compliant, meaning it adheres to environmental standards by being free from hazardous substances.
Applications may include battery management systems, LED drivers, and other scenarios where precise power delivery is critical. For detailed specifications, consulting the manufacturer's datasheet would provide comprehensive information on electrical characteristics, pin configurations, and operational guidelines.
Features
Key specifications include a maximum gate threshold voltage (VGS(th)) range of 2V to 4V, fast switching speeds, and a low total gate charge (Qg), which helps reduce power consumption during switching. The IRFS3206TRRPBF comes in a TO-220 package, facilitating effective heat dissipation. Its RoHS-compliant construction ensures environmental safety. Overall, this MOSFET is ideal for applications requiring high efficiency and reliability in a compact form factor.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is turned on.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground in low-side switching applications.
4. Gate (G): Sometimes libraries may list a configuration where the gate is repeated for clarity in layout.
5. Thermal Pad (T): Although not a pin in the traditional sense, the thermal pad is used for heat dissipation.
The IRFS3206TRRPBF is used in applications such as power management, switching power supplies, and motor control due to its high efficiency and low on-resistance.
Manufacturer
Application
Equivalent
1. NTP60N06 (Nexperia)
2. STP60NF06 (STMicroelectronics)
3. FDPF320N06 (Fairchild)
4. BSS138 (Infineon)
Always check the datasheets for specific parameters to ensure compatibility in your application.
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Zahlungen
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