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IRFS38N20DTRLP
MOSFET N-CH 200V 43A D2PAK
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- Fr. Teil #IRFS38N20DTRLP
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- Datenblatt IRFS38N20DTRLP DataSheet
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Spezifikationen
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 43A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 54mOhm @ 26A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 91 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2900 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Übersicht
Description
This MOSFET is characterized by its low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation. It typically has fast switching speeds, allowing for efficient performance in applications requiring rapid on/off control.
The device is packaged in a TO-220 form factor, facilitating heat dissipation through a heatsink when necessary. Its robust design and reliability make it a popular choice in consumer electronics, automotive applications, and industrial systems.
Overall, the IRFS38N20DTRLP is an effective solution for designers seeking high-performance MOSFETs in compact electronic systems.
Features
- Voltage Rating: 200V, making it suitable for high-voltage applications.
- Continuous Drain Current: 38A, allowing for robust current handling.
- Low RDS(on): Approximately 0.080 ohms, which minimizes conduction losses and improves efficiency.
- Gate Threshold Voltage (VGS(th)): Typically between 2V to 4V, facilitating easier drive with lower gate voltages.
- Fast Switching Speed: Ideal for applications requiring rapid switching to enhance performance.
- Package Type: Available in a TO-220 package, which offers good thermal management.
- Applications: Widely used in power supplies, motor drives, and other power management systems.
Overall, the IRFS38N20DTRLP is a reliable choice for engineers looking for efficiency and performance in high-voltage applications.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is the terminal through which the main current flows when the MOSFET is on. It connects to the load.
3. Source (S) - This pin serves as the return path for the current flowing through the MOSFET. It is connected to ground or the negative side of the circuit.
The IRFS38N20DTRLP is designed for high-speed switching applications and supports a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 38A.
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Zahlungen
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