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IRFS4310TRLPBF
MOSFET N-CH 100V 130A D2PAK
- Hersteller
- Fr. Teil #IRFS4310TRLPBF
- Paket TO-263-3
- Datenblatt IRFS4310TRLPBF DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7670 pF @ 50 V |
| PowerDissipation(Max) | 300W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Übersicht
Description
Key features of the IRFS4310TRLPBF include high efficiency, low output ripple, and fast transient response, which enhance the overall performance of power delivery systems. Additionally, it may incorporate protection features like overcurrent, thermal shutdown, and under-voltage lockout, ensuring stable operation in various conditions.
The "TRLPBF" designation indicates a specific package type (TSSOP-16) and lead-free status, making it compliant with RoHS standards. Overall, the IRFS4310TRLPBF is an essential component for designers aiming to optimize power supply efficiency and reliability in their electronic designs.
Features
- Voltage Rating: 30V, suitable for a variety of low-voltage applications.
- Current Rating: Capable of handling continuous drain currents up to 60A, providing robust performance in demanding environments.
- RDS(on): Low on-resistance (around 0.0065 ohms), minimizing power losses and improving thermal performance.
- Gate Threshold Voltage: Low Vgs(th) of 1-2.5V, enabling operation with low drive voltages.
- Package: Offered in a TO-220 package, allowing for efficient heat dissipation and easy mounting.
- Applications: Ideal for use in power supply circuits, motor drivers, and other high-efficiency switching applications.
This MOSFET is particularly valued for its combination of high current capability, low on-resistance, and low gate drive requirements, making it suitable for a wide range of electronic and industrial applications.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate determines whether the device is on (conducting) or off (non-conducting).
2. Drain (D) - This pin is where the current flows out of the MOSFET when it is in the on state.
3. Source (S) - This pin is where the current enters the MOSFET. It is typically connected to ground in low-side switching applications.
The package type for the IRFS4310TRLPBF is typically a TO-220 or similar, suitable for power applications. It is designed for high voltage and current switching, making it ideal for applications in power management and motor control.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
Payment Methods
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