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IRFU120NPBF
MOSFET N-CH 100V 9.4A IPAK
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- Fr. Teil #IRFU120NPBF
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- Datenblatt IRFU120NPBF DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
| Power Dissipation (Max) | 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Base Product Number | IRFU120 |
Übersicht
Description
The IRFU120NPBF features a low on-resistance, which minimizes power loss and heat generation during operation, enhancing overall system efficiency. Its fast switching capabilities make it ideal for use in DC-DC converters, motor drives, and other applications requiring efficient power management. The device is housed in a TO-220 package, offering ease of heat dissipation and mounting.
Additionally, the "NPBF" suffix indicates that the part is lead-free, complying with RoHS standards, making it environmentally friendly. Overall, the IRFU120NPBF is a versatile component for modern electronic design, balancing performance, thermal management, and regulatory compliance.
Features
1. Voltage Rating: 55V, suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 120A, making it ideal for power switching.
3. RDS(on): Low on-resistance (typically around 0.05 ohms), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: Typically between 2V to 4V, allowing for logic-level gate drive compatibility.
5. Package Type: Available in TO-220 and DPAK packages, facilitating easy thermal management and integration into various designs.
6. Fast Switching Speed: Suitable for high-frequency applications, enhancing overall circuit performance.
7. Thermal Performance: Excellent thermal characteristics, enabling operation in demanding environments.
These features make the IRFU120NPBF a popular choice for applications such as power supplies, motor drivers, and other high-efficiency switching circuits.
Package
Pinout
1. Gate (G): The input terminal that controls the operation of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which the current enters the MOSFET when it is conducting.
This MOSFET is designed for high-speed switching applications and is typically used in power management circuits, motor control, and in various electronic devices. It features low on-resistance and can handle significant current and voltage levels, making it suitable for efficient power conversion applications.
Manufacturer
Application
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Versand
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Zahlungen
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Die Zahlungsfrist ist 100% Prepaid.
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