IRFU120NPBF

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IRFU120NPBF

MOSFET N-CH 100V 9.4A IPAK

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Spezifikationen

Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251AA)
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number IRFU120

Übersicht

Description

The IRFU120NPBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power switching applications. It is part of the International Rectifier's family of MOSFETs, known for their efficiency and reliability in various electronic circuits. With a maximum drain-source voltage (V_DS) of 120V and a continuous drain current (I_D) of up to 40A, this MOSFET is suitable for automotive, industrial, and consumer applications.
The IRFU120NPBF features a low on-resistance, which minimizes power loss and heat generation during operation, enhancing overall system efficiency. Its fast switching capabilities make it ideal for use in DC-DC converters, motor drives, and other applications requiring efficient power management. The device is housed in a TO-220 package, offering ease of heat dissipation and mounting.
Additionally, the "NPBF" suffix indicates that the part is lead-free, complying with RoHS standards, making it environmentally friendly. Overall, the IRFU120NPBF is a versatile component for modern electronic design, balancing performance, thermal management, and regulatory compliance.

Features

The IRFU120NPBF is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: 55V, suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 120A, making it ideal for power switching.
3. RDS(on): Low on-resistance (typically around 0.05 ohms), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: Typically between 2V to 4V, allowing for logic-level gate drive compatibility.
5. Package Type: Available in TO-220 and DPAK packages, facilitating easy thermal management and integration into various designs.
6. Fast Switching Speed: Suitable for high-frequency applications, enhancing overall circuit performance.
7. Thermal Performance: Excellent thermal characteristics, enabling operation in demanding environments.
These features make the IRFU120NPBF a popular choice for applications such as power supplies, motor drivers, and other high-efficiency switching circuits.

Package

The IRFU120NPBF is available in a TO-220 package type. This configuration is commonly used for power transistors, providing good thermal performance and easy mounting on heatsinks.

Pinout

The IRFU120NPBF is a N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): The input terminal that controls the operation of the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which the current enters the MOSFET when it is conducting.
This MOSFET is designed for high-speed switching applications and is typically used in power management circuits, motor control, and in various electronic devices. It features low on-resistance and can handle significant current and voltage levels, making it suitable for efficient power conversion applications.

Manufacturer

The IRFU120NPBF is manufactured by Vishay Intertechnology, Inc. Vishay is a multinational company known for its production of a wide range of electronic components, including resistors, capacitors, inductors, and semiconductors. Founded in 1962, Vishay operates in various sectors, including industrial, automotive, telecommunications, and consumer electronics. The company is recognized for its innovative solutions in the electronics industry and focuses on high-quality, reliable components used in various applications.

Application

The IRFU120NPBF is a high-speed N-channel MOSFET primarily used in power management applications. Its typical application areas include DC-DC converters, switching power supplies, motor control, and audio amplifiers. It is also suitable for use in electronic load, power inverters, and other applications requiring efficient switching and low on-resistance performance.

Equivalent

The IRFU120NPBF is a N-channel MOSFET from Infineon. Equivalent products include the STP16NF06 from STMicroelectronics, the FQP16N06 from On Semiconductor, and the BSS138 from Vishay. For similar specifications, consider the AOD6N60 or the MTP6N60 from On Semiconductor as well. Always verify the specific voltage and current ratings for compatibility in your application.

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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