IRGS4B60KD1TRRP

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IRGS4B60KD1TRRP

IGBT NPT 600V 11A D2PAK

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Spezifikationen

Part Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 11 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
Power - Max 63 W
Switching Energy 73µJ (on), 47µJ (off)
Input Type Standard
Gate Charge 12 nC
Td (on/off) @ 25°C 22ns/100ns
Test Condition 400V, 4A, 100Ohm, 15V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number IRGS4B60
Current - Collector Pulsed (Icm) 22 A
Reverse Recovery Time (trr) 93 ns

Übersicht

Description

IRGS4B60KD1TRRP is a high-voltage, N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating that allows it to handle substantial loads efficiently. The device is built on advanced semiconductor technology, ensuring low on-resistance (R_DS(on)), which minimizes power loss and enhances thermal performance.
Typically used in switching applications, such as power supplies, motor drives, and inverters, the IRGS4B60KD1TRRP provides fast switching capabilities, allowing for improved efficiency in power conversion. Its robust construction and thermal characteristics make it suitable for harsh environments, ensuring reliability and performance in various industrial applications. This MOSFET is part of the IR (International Rectifier) product line, known for high-performance components in the power electronics sector.

Features

The IRGS4B60KD1TRRP is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for power electronics applications. Key features include:
1. Voltage Rating: 600V, suitable for medium voltage applications.
2. Current Rating: Capable of handling high current levels, typically up to 40A.
3. Low Switching Losses: Designed for efficient operation, reducing energy losses during switching.
4. Fast Switching Speed: Enables high-frequency operation, beneficial for inverter and converter applications.
5. Robust Design: Built to withstand harsh operating conditions, improving reliability.
6. Thermal Performance: Features a low thermal resistance, aiding in effective heat dissipation.
7. Rugged Construction: Enhanced gate protection and avalanche rating for safe operation in various environments.
These attributes make the IRGS4B60KD1TRRP suitable for applications such as motor drives, UPS systems, and renewable energy systems.

Package

The IRGS4B60KD1TRRP is packaged in a TO-220 format, which is a common type of package for power devices. This package type provides efficient thermal management and is suitable for applications requiring high power handling.

Pinout

The IRGS4B60KD1TRRP is an N-channel MOSFET used for power applications. It features a total of 4 pins. The pin configuration and their typical functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET, allowing it to switch on and off.
2. Drain (D) - The primary current-carrying terminal where the load is connected.
3. Source (S) - The terminal connected to the ground in typical applications, serving as the return path for the current.
The device is designed for high-speed switching applications and can handle high voltage levels, making it suitable for a variety of power electronics applications. Ensure to consult the datasheet for more detailed specifications and electrical characteristics.

Manufacturer

The IRGS4B60KD1TRRP is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power semiconductors, microcontrollers, and other electronic components. The company focuses on various markets, including automotive, industrial power control, and IoT (Internet of Things). Infineon is recognized for its innovation in energy efficiency and performance, contributing to areas such as renewable energy, electric mobility, and intelligent transportation systems.

Application

The IRGS4B60KD1TRRP is an insulated gate bipolar transistor (IGBT) primarily used in industrial applications such as motor drives, inverters, and power supplies. It is suitable for high-power switching applications, including renewable energy systems (like solar inverters), electric vehicles, and induction heating. Its features enable efficient energy conversion and control in various power electronics applications.

Equivalent

The IRGS4B60KD1TRRP is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon. Equivalent products include:
1. Mitsubishi MGF50N60
2. Rohm SGT40N60
3. Fairchild FGA60N60
4. ON Semiconductor MBRF60
Ensure to check the specifications such as voltage, current ratings, and switching characteristics for compatibility.

Versand

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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