IRL520NPBF

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IRL520NPBF

MOSFET N-CH 100V 10A TO220AB

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Spezifikationen

Supplier Infineon Technologies
Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 10A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4V, 10V
RdsOn(Max)@IdVgs 180mOhm @ 6A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 20 nC @ 5 V
Vgs(Max) ±16V
InputCapacitance(Ciss)(Max)@Vds 440 pF @ 25 V
PowerDissipation(Max) 48W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Übersicht

Description

IRL520NPBF is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a low on-resistance, allowing it to conduct significant current with minimal heat generation, making it ideal for switching and amplification purposes in power supply circuits.
With a high breakdown voltage and fast switching speeds, the IRL520NPBF is often used in applications such as motor control, power converters, and driver circuits. This MOSFET is particularly valued for its capability to operate at low gate voltages, which enhances its compatibility with microcontrollers and logic-level circuits.
The "N" in the name indicates that it is an N-channel device, while "PBF" denotes compliance with lead-free and RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly. Overall, the IRL520NPBF is a versatile component widely used in various electronic devices and systems.

Features

The IRL520NPBF is a N-channel MOSFET designed for various applications in power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 9.2A, enabling it to manage substantial loads.
3. On-Resistance: The on-resistance (R_DS(on)) is low, typically around 0.27 ohms at a gate-source voltage (V_GS) of 10V, which ensures efficient operation with minimal power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing it to be driven by low-voltage signals.
5. Packaging: It is available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching: The device features high-speed switching capabilities, making it ideal for applications such as PWM control.
Overall, the IRL520NPBF is a versatile and reliable MOSFET suitable for a variety of electronic applications.

Package

The IRL520NPBF is typically packaged in a TO-220 format. This package type is known for its good thermal performance and ease of mounting on heatsinks, making it suitable for applications requiring higher power handling.

Pinout

The IRL520NPBF is a N-channel MOSFET with a total of 3 pins. The pinout and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the load connects. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It serves as the return path for current flowing through the device.
The IRL520 is designed for low-voltage applications with a maximum drain-source voltage (V_DS) of 100V and can handle a continuous drain current (I_D) of up to 9.2A. Its logic-level gate voltage allows it to be driven directly by microcontrollers.

Manufacturer

The IRL520NPBF is manufactured by Texas Instruments (TI), a well-established American technology company. Founded in 1930, Texas Instruments specializes in designing and manufacturing semiconductors and various integrated circuits. The company is renowned for its innovations in analog and embedded processing, and it serves a wide range of markets including automotive, industrial, communications, and consumer electronics. TI is also known for its commitment to technology development, including advanced semiconductor solutions that enhance performance and efficiency in electronic devices. The IRL520NPBF itself is a N-channel MOSFET, commonly used in power management applications and switching circuits.

Application

The IRL520NPBF is a N-channel MOSFET primarily used in power switching applications. Its key application areas include motor control, power supplies, LED lighting, and electronic switching. It is suitable for low-voltage high-current applications, making it ideal for automotive, industrial automation, and consumer electronics where efficient switching and low on-resistance are crucial.

Equivalent

The IRL520NPBF is a N-channel MOSFET. Equivalent products include:
1. IRF520 - similar specifications but with higher gate threshold.
2. STP16NF06 - rated for higher current and voltage.
3. FQP30N06L - logic-level MOSFET with similar characteristics.
4. BSS138 - lower power, typically used for smaller applications.
Always check datasheets for specific application requirements and performance characteristics.

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