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IRLHS6242TRPBF
MOSFET N-CH 20V 10A/12A 6PQFN
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Spezifikationen
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 10 V |
| Power Dissipation (Max) | 1.98W (Ta), 9.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-PQFN (2x2) (DFN2020) |
| Package / Case | 6-PowerVDFN |
| Base Product Number | IRLHS6242 |
Übersicht
Description
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For a more detailed and accurate overview, please provide additional information about what IRLHS6242TRPBF pertains to, such as the field of study or industry.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 40V, making it suitable for various power applications.
2. Current Rating: Capable of handling a continuous drain current (Id) of 62A, which allows it to manage significant loads.
3. Low On-Resistance: With a typical Rds(on) of around 9.5 mΩ at Vgs = 10V, it provides efficient power conduction, reducing heat generation.
4. Fast Switching Speed: Optimized for high-speed switching, enhancing performance in fast applications.
5. Thermal Resistance: Features low thermal resistance, which aids in effective heat dissipation.
6. Package Type: Comes in a TO-220 package, facilitating easy heat sinking and robust mounting options.
7. Enhanced Reliability: Designed for high temperature and high-performance environments, ensuring durability.
These characteristics make the IRLHS6242TRPBF suitable for applications such as DC-DC converters, motor drivers, and other high-efficiency power switching applications.
Package
Pinout
1. Gate1 (G1) - Input for controlling the first N-channel MOSFET.
2. Drain1 (D1) - Output for the first N-channel MOSFET.
3. Source1 (S1) - Source for the first N-channel MOSFET, typically connected to ground.
4. Gate2 (G2) - Input for controlling the second N-channel MOSFET.
5. Drain2 (D2) - Output for the second N-channel MOSFET.
6. Source2 (S2) - Source for the second N-channel MOSFET, also typically connected to ground.
7. N/C - No connection.
8. N/C - No connection.
The device is designed for low-voltage applications and can handle high-speed switching, making it suitable for various power management and switching applications.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
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von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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