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IRLL024ZTRPBF
MOSFET N-CH 55V 5A SOT223
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- Datenblatt IRLL024ZTRPBF DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | IRLL024 |
Übersicht
Description
If IRLL024ZTRPBF pertains to International Relations, it may cover topics like global politics, diplomacy, international law, or security studies, focusing on both theoretical frameworks and practical applications in real-world scenarios. It could also involve analysis of historical and contemporary issues affecting international relations.
For precise information on the course content, objectives, and requirements, I recommend checking the official course catalog or syllabus provided by the educational institution offering the module.
Features
1. Dual-Channel Output: Supports two independent low-side MOSFETs for efficient power management.
2. Input Voltage Range: Operates typically from 5V to 15V, compatible with various control signals.
3. High-Speed Switching: Capable of switching speeds up to several hundred kilohertz, enabling efficient operation in power conversion applications.
4. Output Drive Capability: Provides strong drive current capability to quickly charge and discharge MOSFET gate capacitances, which reduces switching losses.
5. Thermal and Overcurrent Protection: Equipped with features to protect against thermal overload and overcurrent conditions.
6. Compact Package: Available in a small footprint, facilitating design in space-constrained applications.
This device is widely used in applications such as motor drives, power supplies, and other power electronics where efficient switching and control of MOSFETs are required.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate will turn the device on or off, allowing or blocking current flow between the drain and source.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is on. The current enters the drain from the load side.
3. Source (S): This pin is connected to the ground or negative side of the circuit and is the pin through which the current exits the MOSFET when it is conducting.
The IRLL024ZTRPBF is often used in low-voltage switching applications due to its low on-resistance and high-speed switching capabilities. It is commonly utilized in power management, motor control, and other electronic applications.
Manufacturer
Application
Equivalent
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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