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IRLR024NPBF
MOSFET N-CH 55V 17A DPAK
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Spezifikationen
| Series | HEXFET® |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
| Power Dissipation (Max) | 45W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Übersicht
Description
The "N" in the part number indicates that it is an N-channel MOSFET, which is commonly used for low-side switching in circuits. Its compact package design allows for easier integration into modern electronic designs. Overall, IRLR024NPBF is valued for its performance in energy-efficient applications, making it a popular choice among engineers and designers in the electronics industry.
Features
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents of up to 55A, depending on the thermal conditions, allowing for significant power handling.
3. R_DS(on): The device features a low on-resistance (R_DS(on)) of approximately 0.022 ohms at 10V gate voltage, which reduces conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2V, enabling efficient switching at lower gate voltages.
5. Package: It is available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Optimized for high-speed switching, making it ideal for applications such as power supplies, motor drivers, and DC-DC converters.
Overall, the IRLR024NPBF is a versatile MOSFET suitable for a variety of electronic applications requiring efficient power control.
Package
Pinout
1. Gate (G) - This pin controls the MOSFET's on/off state. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - The drain pin is where the output current flows out of the MOSFET when it is in the on state.
3. Source (S) - The source pin is where the current enters the MOSFET.
The IRLR024NPBF is designed for applications requiring efficient switching and can handle high voltages and currents, making it suitable for various power management tasks in electronic circuits.
Manufacturer
Application
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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