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IRLTS2242TRPBF
MOSFET P-CH 20V 6.9A 6TSOP
- Hersteller
- Fr. Teil #IRLTS2242TRPBF
- Paket SOT-23-6
- Datenblatt IRLTS2242TRPBF DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 6.9A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 32mOhm @ 6.9A, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 10µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 905 pF @ 10 V |
| PowerDissipation(Max) | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 6-TSOP |
Übersicht
Description
In general, components like IRLTS2242TRPBF are utilized in electronic circuits for enhancing performance in consumer electronics, automotive systems, and industrial applications. The "TR" in the part number often indicates that it is packaged in tape and reel for automated assembly processes.
For precise information on the IRLTS2242TRPBF, including its electrical specifications, maximum ratings, and application notes, consulting the manufacturer's datasheet is essential. This document would provide detailed insights on the component’s functionality and best practices for integration into electronic designs.
Features
1. Low On-Resistance: This provides efficient power management, reducing heat generation during operation.
2. High-Speed Switching: Suitable for fast-switching applications, enhancing performance in power conversion and signal processing.
3. High-Voltage Capability: Can handle drain-source voltages up to 30V, making it versatile for various applications.
4. Compact Package: Available in a surface-mount SO-8 package, allowing for space-saving designs in PCBs.
5. Low Gate Threshold Voltage: Ensures compatibility with low-voltage drive circuits, enabling ease of integration.
6. Robust Thermal Performance: Good thermal characteristics enhance reliability in demanding environments.
This MOSFET is ideal for applications such as DC-DC converters, motor drivers, and power management systems in consumer electronics.
Package
Pinout
The functions of the pins are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connects to the load for the first MOSFET.
3. Source 1 (S1) - Ground or source connection for the first MOSFET.
4. Source 2 (S2) - Ground or source connection for the second MOSFET.
5. Drain 2 (D2) - Connects to the load for the second MOSFET.
6. Gate 2 (G2) - Controls the second N-channel MOSFET.
7. Drain 1 (D1) - Same as it shares a connection for design efficiency.
8. Drain 2 (D2) - Same as it shares a connection for design efficiency.
This configuration allows usage in various switching applications. The device is designed for low on-resistance and high-speed switching.
Manufacturer
Application
Equivalent
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Zahlungen
Payment Methods
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